DISPLAY SUBSTRATE AND MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE

• US 20180217421A1
• Filed: 05/23/2016
• Published: 08/02/2018
• Est. Priority Date: 01/04/2016
• Status: Abandoned Application

• Current Assignee: BOE Technology Group Co., Ltd.
• Original Assignee: BOE Technology Group Co., Ltd.
• Inventors: Chen, Shantao, Zhang, Huijuan, Guo, Yidong
• Application Number:
  US15/322,547
• Publication Number:
  US 20180217421A1
• Time in Patent Office: Days
• CPC Class Codes: G02F 1/133357 Planarisation layers
• CPC Class Codes: G02F 1/133371 Cells with varying thickness of the liquid crystal layer
• CPC Class Codes: G02F 1/1337 Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2201/123 pixel
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate

Abstract

Embodiments of the present disclosure provide a display substrate and manufacturing method thereof and a display device. The method of manufacturing the display substrate comprises: forming a pattern including an active layer on a base substrate using an amorphous silicon material, the active layer including at least one step region having a film thickness greater than a film thickness of other regions of the active layer; crystallizing the amorphous silicon material in the active layer into a polysilicon material.

Claims

1. A method of manufacturing a display substrate, comprising:

forming a pattern including an active layer on a base substrate using an amorphous silicon material, the active layer including at least one step region having a film thickness greater than a film thickness of other regions of the active layer;

crystallizing the amorphous silicon material in the active layer into a polysilicon material.

2. The method according to claim 1, wherein forming a pattern including an active layer on a base substrate using an amorphous silicon material, the active layer including at least one step region, comprises:

forming an amorphous silicon material layer on the base substrate;

removing hydrogen from the amorphous silicon material using annealing process;

forming a pattern including an active layer on the base substrate using a halftone mask, the active layer including a plurality of regularly arranged step regions.

3. The method according to claim 1, wherein crystallizing the amorphous silicon material in the active layer into a polysilicon material comprises:

irradiating the active layer with laser light to crystallize the amorphous silicon material in the active layer into a polysilicon material.

4. The method according to claim 3, wherein said irradiating the active layer with laser light to crystallize the amorphous silicon material in the active layer into a polysilicon material comprises:

irradiating the active layer with excimer laser light to crystallize the amorphous silicon material in the active layer into a polysilicon material.

5. The method according to claim 4, wherein irradiating the active layer with excimer laser light to crystallize the amorphous silicon material in the active layer into a polysilicon material comprises:

irradiating the active layer with excimer laser light so that an amorphous silicon material in a step region of the active layer exhibits an incompletely molten state and amorphous silicon materials in regions other than the step region exhibit a completely molten state, after crystallization, forming a polycrystal material which uses the amorphous silicon material in an incompletely molten state in the step region as a crystal nucleus.

6. The method according to claim 1, further comprises, prior to forming a pattern including an active layer on a base substrate, forming a buffer layer on the base substrate, the buffer layer being located between the base substrate and the active layer.

7. The method according to claim 1, further comprising forming a source/drain doped region in the active layer by ion injection.

8. The method according to claim 7, further comprises, prior to performing ion injection on the active layer,

forming a gate insulating layer on a substrate with the active layer;

forming a pattern including a gate on a substrate with the gate insulating layer.

9. The method according to claim 8, further comprising:

irradiating the active layer with laser light from a side of the base substrate facing away from the active layer to activate ions of the source/drain doped region.

10. The method according to claim 7, further comprising:

irradiating the active layer with laser light to activate ions of the source/drain doped region;

forming a gate insulating layer over the active layer;

forming a gate over the gate insulating layer.

11. The method according to claim 9, wherein the laser light is excimer laser light.

12. The method according to claim 9, further comprising:

forming a passivation layer over the gate, and a first via hole and a second via hole penetrating through the gate insulating layer and the passivation layer;

forming a source and a drain over the passivation layer, wherein the source is electrically connected to the active layer via the first via hole, and the drain is electrically connected to the active layer via the second via hole;

forming a planarization layer over the source and the drain, and a third via hole penetrating through the planarization layer;

forming a pixel electrode over the planarization layer and electrically connecting the pixel electrode to the drain via the third via hole.

13. The method according to claim 12, further comprising forming an alignment film layer over the pixel electrode.

14. The method according to claim 1, wherein a difference in thickness between the step region of the active layer and other regions of the active layer is 300 to 500 Å

.

17. The method according to claim 10, wherein the laser light is excimer laser light.

18. The method according to claim 10, further comprising:

forming a passivation layer over the gate, and a first via hole and a second via hole penetrating through the gate insulating layer and the passivation layer;

forming a source and a drain over the passivation layer, wherein the source is electrically connected to the active layer via the first via hole, and the drain is electrically connected to the active layer via the second via hole;

forming a planarization layer over the source and the drain, and a third via hole penetrating through the planarization layer;

forming a pixel electrode over the planarization layer and electrically connecting the pixel electrode to the drain via the third via hole.

15. A display substrate manufactured by a method comprising:

forming a pattern including an active layer on a base substrate using an amorphous silicon material, the active layer including at least one step region having a film thickness greater than a film thickness of other regions of the active layer;

crystallizing the amorphous silicon material in the active layer into a polysilicon material.

16. A display device comprising the display substrate according to claim 15.

19. The display substrate according to claim 15, wherein forming a pattern including an active layer on a base substrate using an amorphous silicon material, the active layer including at least one step region, comprises:

forming an amorphous silicon material layer on the base substrate;

removing hydrogen from the amorphous silicon material using annealing process;

forming a pattern including an active layer on the base substrate using a halftone mask, the active layer including a plurality of regularly arranged step regions.

20. The display substrate according to claim 15, wherein crystallizing the amorphous silicon material in the active layer into a polysilicon material comprises:

irradiating the active layer with laser light to crystallize the amorphous silicon material in the active layer into a polysilicon material.