SELECTIVE DEPOSITION OF SILICON OXIDE
First Claim
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1. A method of depositing silicon oxide selectively on an exposed silicon oxide surface, the method comprising:
- providing a substrate having the exposed silicon oxide surface and an exposed silicon nitride surface, the exposed silicon nitride surface comprising primary amine groups;
exposing the substrate to an aminosilane to adsorb the aminosilane to the exposed silicon oxide surface; and
performing a thermal atomic layer deposition reaction comprising exposing the substrate to an oxidizing agent, whereby the thermal atomic layer deposition reaction selectively forms silicon oxide on the exposed silicon oxide surface relative to the exposed silicon nitride surface.
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Abstract
Methods and apparatuses for selectively depositing silicon oxide on a silicon oxide surface relative to a silicon nitride surface are described herein. Methods involve pre-treating a substrate surface using ammonia and/or nitrogen plasma and selectively depositing silicon oxide on a silicon oxide surface using alternating pulses of an aminosilane silicon precursor and an oxidizing agent in a thermal atomic layer deposition reaction without depositing silicon oxide on an exposed silicon nitride surface.
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16 Claims
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1. A method of depositing silicon oxide selectively on an exposed silicon oxide surface, the method comprising:
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providing a substrate having the exposed silicon oxide surface and an exposed silicon nitride surface, the exposed silicon nitride surface comprising primary amine groups; exposing the substrate to an aminosilane to adsorb the aminosilane to the exposed silicon oxide surface; and performing a thermal atomic layer deposition reaction comprising exposing the substrate to an oxidizing agent, whereby the thermal atomic layer deposition reaction selectively forms silicon oxide on the exposed silicon oxide surface relative to the exposed silicon nitride surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of depositing silicon oxide selectively on an exposed silicon oxide surface, the method comprising:
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providing a substrate having an exposed silicon oxide surface and an exposed silicon nitride surface, the exposed silicon nitride surface comprising primary amine groups; performing a thermal atomic layer deposition reaction to selectively form silicon oxide on the exposed silicon oxide surface relative to the exposed silicon nitride surface, the thermal atomic layer deposition reaction comprising; exposing the substrate to an aminosilane to adsorb the aminosilane to the exposed silicon oxide surface; and exposing the substrate to an oxidizing agent to form the silicon oxide selectively on the exposed silicon oxide surface relative to the exposed silicon nitride surface, whereby the thermal atomic layer deposition reaction.
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Specification