MULTI-WAVELENGTH SEMICONDUCTOR LASERS
First Claim
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1. A multi-wavelength semiconductor laser, comprising:
- a silicon-on-insulator (SOI) substrate;
a quantum dot (QD) layer above the SOI substrate, the QD layer including an active region, and at least one end of the QD layer having an angled junction;
a waveguide included in an upper silicon layer of the SOI substrate; and
a mode converter included in the waveguide to facilitate optical coupling of a lasing mode to the waveguide.
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Abstract
Examples disclosed herein relate to multi-wavelength semiconductor lasers. In some examples disclosed herein, a multi-wavelength semiconductor laser may include a silicon-on-insulator (SOI) substrate and a quantum dot (QD) layer above the SOI substrate. The QD layer may include and active gain region and may have at least one angled junction at one end of the QD layer. The SOI substrate may include a waveguide in an upper silicon layer and a mode converter to facilitate optical coupling of a lasing mode to the waveguide.
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Citations
20 Claims
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1. A multi-wavelength semiconductor laser, comprising:
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a silicon-on-insulator (SOI) substrate; a quantum dot (QD) layer above the SOI substrate, the QD layer including an active region, and at least one end of the QD layer having an angled junction; a waveguide included in an upper silicon layer of the SOI substrate; and a mode converter included in the waveguide to facilitate optical coupling of a lasing mode to the waveguide. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A multi-wavelength semiconductor laser, comprising:
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a waveguide included in a first silicon layer of a silicon-on-insulator (SOI) substrate; a quantum dot (QD) layer above the SOI substrate, the QD layer including an active gain region, and at least one end of the QD layer having a tapered junction; a mode converter comprising a taper in the waveguide to couple a lasing mode to the waveguide; and a first mirror and a second mirror. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A multi-wavelength semiconductor laser, comprising:
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a silicon-on-insulator (SOI) substrate; a waveguide ring included in an upper silicon layer of the SOI substrate; a quantum dot (QD) layer above the waveguide ring, the QD layer including an active gain region; a second waveguide included in the upper silicon layer of the SOI substrate, the second waveguide being next to the first waveguide; and a mirror included in the second waveguide. - View Dependent Claims (19, 20)
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Specification