REMOVING A RESIDUAL PHOTO-MASK FENCE IN PHOTOLITHOGRAPHY
First Claim
1. A method comprising:
- filling during a semiconductor fabrication process, in a space bound on at least one side by a fence formation, a first material, wherein the fence formation is created as a result of an etching operation using a photo-mask to form a structure;
depositing a solvent-removable material such that the solvent-removable material encapsulates at least that portion of the fence formation which is protruding from the structure such that a height of the fence formation exceeds a height of the structure;
removing by planarization, the portion of the fence formation which is protruding from the structure, and a first portion of the solvent-removable material; and
removing by dissolving in a solvent, a second portion of the solvent-removable material, the second portion remaining after removal by the planarization of the first portion of the solvent-removable material.
1 Assignment
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Accused Products
Abstract
A first material is filled during a semiconductor fabrication process in a space bound on at least one side by a fence formation created as a result of an etching operation. A solvent-removable material is deposited such that the solvent-removable material encapsulates at least that portion of the fence formation which is protruding from the structure such that a height of the fence formation exceeds a height of the structure. The portion of the fence formation which is protruding from the structure and a first portion of the solvent-removable material are removed by planarization. A second portion of the solvent-removable material is removed by dissolving in a solvent, the second portion remaining after removal by the planarization of the first portion of the solvent-removable material.
0 Citations
20 Claims
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1. A method comprising:
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filling during a semiconductor fabrication process, in a space bound on at least one side by a fence formation, a first material, wherein the fence formation is created as a result of an etching operation using a photo-mask to form a structure; depositing a solvent-removable material such that the solvent-removable material encapsulates at least that portion of the fence formation which is protruding from the structure such that a height of the fence formation exceeds a height of the structure; removing by planarization, the portion of the fence formation which is protruding from the structure, and a first portion of the solvent-removable material; and removing by dissolving in a solvent, a second portion of the solvent-removable material, the second portion remaining after removal by the planarization of the first portion of the solvent-removable material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A computer usable program product comprising one or more computer-readable storage devices, and program instructions stored on at least one of the one or more storage devices, the stored program instructions comprising:
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program instructions to fill during a semiconductor fabrication process, in a space bound on at least one side by a fence formation, a first material, wherein the fence formation is created as a result of an etching operation using a photo-mask to form a structure; program instructions to deposit a solvent-removable material such that the solvent-removable material encapsulates at least that portion of the fence formation which is protruding from the structure such that a height of the fence formation exceeds a height of the structure; program instructions to remove by planarization, the portion of the fence formation which is protruding from the structure, and a first portion of the solvent-removable material; and program instructions to remove by dissolving in a solvent, a second portion of the solvent-removable material, the second portion remaining after removal by the planarization of the first portion of the solvent-removable material. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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20. A computer system comprising one or more processors, one or more computer-readable memories, and one or more computer-readable storage devices, and program instructions stored on at least one of the one or more storage devices for execution by at least one of the one or more processors via at least one of the one or more memories, the stored program instructions comprising:
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program instructions to fill during a semiconductor fabrication process, in a space bound on at least one side by a fence formation, a first material, wherein the fence formation is created as a result of an etching operation using a photo-mask to form a structure; program instructions to deposit a solvent-removable material such that the solvent-removable material encapsulates at least that portion of the fence formation which is protruding from the structure such that a height of the fence formation exceeds a height of the structure; program instructions to remove by planarization, the portion of the fence formation which is protruding from the structure, and a first portion of the solvent-removable material; and program instructions to remove by dissolving in a solvent, a second portion of the solvent-removable material, the second portion remaining after removal by the planarization of the first portion of the solvent-removable material.
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Specification