VERY NARROW ASPECT RATIO TRAPPING TRENCH STRUCTURE WITH SMOOTH TRENCH SIDEWALLS
First Claim
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1. A semiconductor structure comprising:
- a plurality of epitaxial semiconductor fins located on a substrate;
a bottom spacer laterally surrounding a bottom portion of each epitaxial semiconductor fin; and
a semiconductor oxide insulator structure located between each pair of neighboring epitaxial semiconductor fins and neighboring bottom spacers and having a topmost surface located below a topmost surface of each epitaxial semiconductor fin, wherein the bottom spacer has a topmost surface that is entirely in direct contact with a bottommost surface of the semiconductor oxide insulator structure and a width that is less than a width of the semiconductor oxide insulator structure.
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Abstract
After forming a plurality of semiconductor fins that are separated from one another by trenches on a substrate, the semiconductor fins are fully or partially oxidized to provide semiconductor oxide portions. The volume expansion caused by the oxidation of the semiconductor fins reduces widths of the trenches, thereby providing narrowed trenches for formation of epitaxial semiconductor fins using aspect ratio trapping techniques.
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Citations
13 Claims
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1. A semiconductor structure comprising:
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a plurality of epitaxial semiconductor fins located on a substrate; a bottom spacer laterally surrounding a bottom portion of each epitaxial semiconductor fin; and a semiconductor oxide insulator structure located between each pair of neighboring epitaxial semiconductor fins and neighboring bottom spacers and having a topmost surface located below a topmost surface of each epitaxial semiconductor fin, wherein the bottom spacer has a topmost surface that is entirely in direct contact with a bottommost surface of the semiconductor oxide insulator structure and a width that is less than a width of the semiconductor oxide insulator structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13-20. -20. (canceled)
Specification