PROCESS WINDOW WIDENING USING COATED PARTS IN PLASMA ETCH PROCESSES
First Claim
1. A method of etching, the method comprising:
- mixing plasma effluents with a gas in a first section of a chamber to form a first mixture;
flowing the first mixture to a substrate in a second section of the chamber;
reacting the first mixture with the substrate to etch a first layer selectively over a second layer;
forming a second mixture comprising products from reacting the first mixture with the substrate, wherein;
the first section and the second section of the chamber comprise nickel plated material.
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Accused Products
Abstract
Embodiments of the present technology may include a method of etching. The method may include mixing plasma effluents with a gas in a first section of a chamber to form a first mixture. The method may also include flowing the first mixture to a substrate in a second section of the chamber. The first section and the second section may include nickel plated material. The method may further include reacting the first mixture with the substrate to etch a first layer selectively over a second layer. In addition, the method may include forming a second mixture including products from reacting the first mixture with the substrate.
9 Citations
15 Claims
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1. A method of etching, the method comprising:
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mixing plasma effluents with a gas in a first section of a chamber to form a first mixture; flowing the first mixture to a substrate in a second section of the chamber; reacting the first mixture with the substrate to etch a first layer selectively over a second layer; forming a second mixture comprising products from reacting the first mixture with the substrate, wherein; the first section and the second section of the chamber comprise nickel plated material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor processing system, the system comprising:
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a remote plasma region; a processing region fluidly coupled with the remote plasma region by a channel; and a gas inlet fluidly coupled to the channel, wherein; the gas inlet defines a flow path for a gas that does not pass through the remote plasma region before entering the processing region, the processing region comprises a pedestal configured to support a substrate, the processing region is at least partially defined by a sidewall and a showerhead, and the sidewall and showerhead are plated with nickel. - View Dependent Claims (12, 13)
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14. A method of etching, the method comprising:
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flowing a first gas comprising ammonia and a fluorine-containing gas through a plasma to form plasma effluents; flowing the plasma effluents through a first section of a chamber; mixing a second gas comprising ammonia with the plasma effluents in a second section of a chamber to form a first mixture; flowing the first mixture to a substrate in a third section of the chamber; reacting the first mixture with the substrate to etch a silicon oxide layer selectively over a silicon layer; forming a second mixture comprising products from reacting the first mixture with the substrate; and flowing the second mixture through a fourth section of the chamber to exit the chamber, wherein; the first section of the chamber does not comprise nickel plated material, the second section, the third section, and the fourth section of the chamber comprise nickel plated material, the third section of the chamber is at a pressure of 10 Torr or lower, and reacting the first mixture with the substrate comprises etching less than 1 Angstrom of the silicon layer and greater than 50 Angstroms of the silicon oxide layer - View Dependent Claims (15)
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Specification