METHOD OF EVALUATING CLEANLINESS, METHOD OF DETERMINING CLEANING CONDITION, AND METHOD OF MANUFACTURING SILICON WAFER

  • US 20190106810A1
  • Filed: 02/28/2017
  • Published: 04/11/2019
  • Est. Priority Date: 03/28/2016
  • Status: Active Grant
First Claim
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1. A method of evaluating cleanliness of a member having a silicon carbide surface, which comprises:

  • bringing the silicon carbide surface into contact with a mixed acid of hydrofluoric acid, hydrochloric acid and nitric acid;

    concentrating the mixed acid brought into contact with the silicon carbide surface by heating;

    subjecting a sample solution, which is obtained by diluting a concentrated liquid obtained by the concentration, to quantitative analysis of metal components by Inductively Coupled Plasma-Mass Spectrometry; and

    evaluating cleanliness of the member having a silicon carbide surface on the basis of a quantitative result of metal components obtained by the quantitative analysis.

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