LIQUID CRYSTAL DISPLAY DEVICE

• US 20190129259A1
• Filed: 10/04/2018
• Published: 05/02/2019
• Est. Priority Date: 12/03/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: ISHITANI, Tetsuji, KUBOTA, Daisuke
• Granted Patent: US 10,838,264 B2
• Time in Patent Office: Days
• CPC Class Codes: G02F 1/133514 Colour filters
• CPC Class Codes: G02F 1/13394 spacers regularly patterned on the cell subtrate, e.g. walls, pillars G02F1/133377 takes precedence
• CPC Class Codes: G02F 1/134309 characterised by their geometrical arrangement
• CPC Class Codes: G02F 1/134372 for fringe field switching [FFS] where the common electrode is not patterned
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making
• CPC Class Codes: G02F 1/1345 Conductors connecting electrodes to cell terminals
• CPC Class Codes: G02F 1/136222 Colour filters incorporated in the active matrix substrate
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence

Abstract

A liquid crystal display device is provided, which includes a thin film transistor including an oxide semiconductor layer, a first electrode layer, a second electrode layer having an opening, a light-transmitting chromatic-color resin layer between the thin film transistor and the second electrode layer, and a liquid crystal layer. One of the first electrode layer and the second electrode layer is a pixel electrode layer which is electrically connected to the thin film transistor, and the other of the first electrode layer and the second electrode layer is a common electrode layer. The light-transmitting chromatic-color resin layer is overlapped with the pixel electrode layer and the oxide semiconductor layer of the thin film transistor.

Claims

1. (canceled)

2. A liquid crystal display device comprising:

a transistor over a substrate, the transistor comprising;

a gate electrode comprising a copper layer;

an oxide semiconductor layer over the gate electrode; and

a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer;

a first insulating film over the transistor;

a resin layer over the first insulating film;

a first electrode layer;

a second electrode layer over the first electrode layer; and

a liquid crystal layer,

wherein one of the first electrode layer and the second electrode layer has an opening, and

wherein one of the first electrode layer and the second electrode layer is a pixel electrode layer which is electrically connected to the transistor, and the other of the first electrode layer and the second electrode layer is a common electrode layer.

3. The liquid crystal display device according to claim 2, wherein the gate electrode further comprises a titanium layer which is positioned over the copper layer.

4. The liquid crystal display device according to claim 2, wherein the oxide semiconductor layer comprises indium, gallium, and zinc.

5. The liquid crystal display device according to claim 2, wherein the source electrode layer and the drain electrode layer are in contact with a top surface of the oxide semiconductor layer.

6. The liquid crystal display device according to claim 2, wherein the first electrode layer is positioned between the substrate and the second electrode layer.

7. The liquid crystal display device according to claim 2, wherein the second electrode layer is positioned between the substrate and the first electrode layer.

8. The liquid crystal display device according to claim 2, wherein the first electrode layer and the second electrode layer comprise the same material.

9. The liquid crystal display device according to claim 2,

wherein the resin layer is a light-transmitting chromatic-color resin layer, and

wherein the resin layer and the transistor overlap each other.