ULTRASONIC TRANSDUCERS IN COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) WAFERS AND RELATED APPARATUS AND METHODS
First Claim
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1. An ultrasound device, comprising:
- a complementary metal oxide semiconductor (CMOS) wafer comprising;
an integrated circuit having a transistor gate layer;
a plurality of metallization layers disposed above the transistor gate layer; and
an ultrasonic transducer formed in the plurality of metallization layers above the transistor gate layer, the ultrasonic transducer comprising;
a bottom electrode formed above a first of the plurality of metallization layers;
a cavity disposed above the bottom electrode; and
a top electrode disposed above the cavity and formed below a second of the plurality of metallization layers;
wherein the bottom electrode comprises a first plurality of vias disposed between the first of the plurality of metallization layers and the cavity, and the top electrode comprises a second plurality of vias disposed between the cavity and the second of the plurality of metallization layers.
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Abstract
Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.
13 Citations
20 Claims
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1. An ultrasound device, comprising:
a complementary metal oxide semiconductor (CMOS) wafer comprising; an integrated circuit having a transistor gate layer; a plurality of metallization layers disposed above the transistor gate layer; and an ultrasonic transducer formed in the plurality of metallization layers above the transistor gate layer, the ultrasonic transducer comprising; a bottom electrode formed above a first of the plurality of metallization layers; a cavity disposed above the bottom electrode; and a top electrode disposed above the cavity and formed below a second of the plurality of metallization layers; wherein the bottom electrode comprises a first plurality of vias disposed between the first of the plurality of metallization layers and the cavity, and the top electrode comprises a second plurality of vias disposed between the cavity and the second of the plurality of metallization layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. The ultrasound device of claim 20, wherein the sealed access holes are formed around a perimeter of the cavity and the plurality of metallization layers run between the sealed access holes.
Specification