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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

  • US 20190252416A1
  • Filed: 04/23/2019
  • Published: 08/15/2019
  • Est. Priority Date: 11/06/2009
  • Status: Active Grant
First Claim
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1. A transistor comprising:

  • a gate electrode layer;

    a gate insulating layer;

    an oxide semiconductor layer comprising a region overlapping with the gate electrode layer with the gate insulating layer provided therebetween; and

    a source electrode layer and a drain electrode layer,wherein the oxide semiconductor layer comprises indium, andwherein the oxide semiconductor layer comprises a crystal region including a nanocrystal with a particle size greater than or equal to 1 nm and less than or equal to 20 nm.

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