SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
1. A transistor comprising:
- a gate electrode layer;
a gate insulating layer;
an oxide semiconductor layer comprising a region overlapping with the gate electrode layer with the gate insulating layer provided therebetween; and
a source electrode layer and a drain electrode layer,wherein the oxide semiconductor layer comprises indium, andwherein the oxide semiconductor layer comprises a crystal region including a nanocrystal with a particle size greater than or equal to 1 nm and less than or equal to 20 nm.
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Abstract
An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured.
3 Citations
18 Claims
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1. A transistor comprising:
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a gate electrode layer; a gate insulating layer; an oxide semiconductor layer comprising a region overlapping with the gate electrode layer with the gate insulating layer provided therebetween; and a source electrode layer and a drain electrode layer, wherein the oxide semiconductor layer comprises indium, and wherein the oxide semiconductor layer comprises a crystal region including a nanocrystal with a particle size greater than or equal to 1 nm and less than or equal to 20 nm. - View Dependent Claims (3, 5, 7, 9, 11, 13, 15, 17)
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2. A transistor comprising:
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a gate electrode layer; a gate insulating layer; an oxide semiconductor layer comprising a first region overlapping with the gate electrode layer with the gate insulating layer provided therebetween and a second region whose resistance is lower than the resistance of the first region; and a source electrode layer and a drain electrode layer, wherein the oxide semiconductor layer comprises indium, and wherein the oxide semiconductor layer comprises a crystal region including a nanocrystal with a particle size greater than or equal to 1 nm and less than or equal to 20 nm. - View Dependent Claims (4, 6, 8, 10, 12, 14, 16, 18)
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Specification