IMAGING ELEMENT, METHOD OF MANUFACTURING IMAGING ELEMENT, AND IMAGING DEVICE
First Claim
Patent Images
1. An imaging element, comprising:
- a first electrode and a second electrode facing each other; and
a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and provided between the first electrode and the second electrode, whereinthe photoelectric conversion layer has an exciton charge separation rate of 1×
1010 s−
1 to 1×
1016 s−
1 both inclusive in a p-n junction surface formed by the p-type semiconductor and the n-type semiconductor.
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Abstract
An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and provided between the first electrode and the second electrode, in which the photoelectric conversion layer has an exciton charge separation rate of 1×1010 s−1 to 1×1016 s−1 both inclusive in a p-n junction surface formed by the p-type semiconductor and the n-type semiconductor.
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Citations
17 Claims
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1. An imaging element, comprising:
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a first electrode and a second electrode facing each other; and a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and provided between the first electrode and the second electrode, wherein the photoelectric conversion layer has an exciton charge separation rate of 1×
1010 s−
1 to 1×
1016 s−
1 both inclusive in a p-n junction surface formed by the p-type semiconductor and the n-type semiconductor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of manufacturing an imaging element, the method comprising:
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forming a first electrode; forming a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor on the first electrode; and forming a second electrode on the photoelectric conversion layer, wherein the photoelectric conversion layer has an exciton charge separation rate of 1×
1010 s−
1 to 1×
1016 s−
1 both inclusive in a p-n junction surface formed by the p-type semiconductor and the n-type semiconductor. - View Dependent Claims (14, 15, 16)
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17. An imaging device provided with a plurality of pixels each including one or a plurality of imaging elements, each of the imaging elements comprising:
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a first electrode and a second electrode facing each other; and a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and provided between the first electrode and the second electrode, wherein the photoelectric conversion layer has an exciton charge separation rate of 1×
1010 s−
1 to 1×
1016 s−
1 both inclusive in a p-n junction surface formed by the p-type semiconductor and the n-type semiconductor.
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Specification