SEMICONDUCTOR ELEMENT AND DISPLAY DEVICE USING THE SAME
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Accused Products
Abstract
A display device including a semiconductor element is provided. The semiconductor element includes: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.
1 Citation
16 Claims
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1. (canceled)
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2. A display device comprising:
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a pixel comprising; a semiconductor layer; a gate insulating film over the semiconductor layer; and a gate wiring over the gate insulating film; a first silicon nitride film over the gate wiring; an organic resin film over the first silicon nitride film, the organic resin film comprising a first opening; a second silicon nitride film over and in contact with the organic resin film, the second silicon nitride film comprising a second opening; and a first electrode over and in contact with the second silicon nitride film, wherein the gate wiring comprises a first region and a second region, wherein the semiconductor layer comprises a first channel formation region which overlaps with the first region of the gate wiring each other and a second channel formation region which overlaps with the second region of the gate wiring each other, wherein a bottom of the first opening overlaps with the first silicon nitride film, wherein the second opening is inside the first opening, wherein the second silicon nitride film covers a top surface of the organic resin film and a side surface of the first opening of the organic resin film, wherein the first electrode is electrically connected to the semiconductor layer, and wherein the first electrode is in contact with a side surface of the second opening of the second silicon nitride film. - View Dependent Claims (3, 4, 5, 6)
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7. A display device comprising:
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a pixel comprising; a semiconductor layer; a gate insulating film over the semiconductor layer; and a gate wiring over the gate insulating film; a first silicon nitride film over the gate wiring; an organic resin film over the first silicon nitride film, the organic resin film comprising a first opening; a second silicon nitride film over and in contact with the organic resin film, the second silicon nitride film comprising a second opening; and a first electrode over and in contact with the second silicon nitride film, wherein the gate wiring comprises a first region and a second region, wherein the semiconductor layer comprises a first channel formation region which overlaps with the first region of the gate wiring each other and a second channel formation region which overlaps with the second region of the gate wiring each other, wherein a bottom of the first opening overlaps with the first silicon nitride film, wherein an area of a bottom of the second opening is smaller than an area of the bottom of the first opening, wherein the second silicon nitride film covers a top surface of the organic resin film and a side surface of the first opening of the organic resin film, wherein the first electrode is electrically connected to the semiconductor layer, and wherein the first electrode is in contact with a side surface of the second opening of the second silicon nitride film. - View Dependent Claims (8, 9, 10, 11)
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12. A display device comprising:
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a pixel comprising; a semiconductor layer; a gate insulating film over the semiconductor layer; and a gate wiring over the gate insulating film; a first silicon nitride film over the gate wiring; a leveling film over the first silicon nitride film, the leveling film comprising a first opening; a second silicon nitride film over and in contact with the leveling film, the second silicon nitride film comprising a second opening; and a first electrode over and in contact with the second silicon nitride film, wherein the gate wiring comprises a first region and a second region, wherein the semiconductor layer comprises a first channel formation region which overlaps with the first region of the gate wiring each other and a second channel formation region which overlaps with the second region of the gate wiring each other, wherein a bottom of the first opening overlaps with the first silicon nitride film, wherein the second opening is inside the first opening, wherein the second silicon nitride film covers a top surface of the leveling film and a side surface of the first opening of the leveling film, wherein the first electrode is electrically connected to the semiconductor layer, and wherein the first electrode is in contact with a side surface of the second opening of the second silicon nitride film. - View Dependent Claims (13, 14, 15, 16)
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Specification