Arrays Of Memory Cells Individually Comprising A Capacitor And An Elevationally-Extending Transistor, Methods Of Forming A Tier Of An Array Of Memory Cells, And Methods Of Forming An Array Of Memory Cells Individually Comprising A Capacitor And An Elevationally-Extending Transistor

• US 20200017839A1
• Filed: 09/25/2019
• Published: 01/16/2020
• Est. Priority Date: 01/10/2017
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Ramaswamy, Durai Vishak Nirmal
• Granted Patent: US 10,676,722 B2
• Time in Patent Office: Days
• CPC Class Codes: C12N 15/1133 against herpetoviridae, e.g. HSV
• CPC Class Codes: C12N 2310/113 targeting other non-coding nucleic acids, e.g. antagomirs
• CPC Class Codes: C12N 2310/14 interfering N.A.
• CPC Class Codes: C12N 2310/141 MicroRNAs, miRNAs
• CPC Class Codes: C12N 2310/3231 having an additional ring, e.g. LNA, ENA
• CPC Class Codes: C12N 2710/16211 Lymphocryptovirus, e.g. human herpesvirus 4, Epstein-Barr Virus
• CPC Class Codes: C12N 2710/16263 by chemical treatment
• CPC Class Codes: C12N 7/00 Viruses; Bacteriophages; Compositions thereof; Preparation or purification thereof preparing medicinal viral antigen or antibody compositions, e.g. virus vaccines, A61K39/00
• CPC Class Codes: C12Q 1/701 Specific hybridization probes
• CPC Class Codes: C12Q 1/705 for herpetoviridae, e.g. herpes simplex, varicella zoster
• CPC Class Codes: C12Q 2600/136 Screening for pharmacological compounds
• CPC Class Codes: C12Q 2600/158 Expression markers
• CPC Class Codes: H01L 28/91 made by depositing layers, e.g. by depositing alternating conductive and insulating layers
• CPC Class Codes: H01L 29/66666 Vertical transistors H01L29/66712, H01L29/66742 take precedence
• CPC Class Codes: H01L 29/7827 Vertical transistors H01L29/7802, H01L29/78642 take precedence
• CPC Class Codes: H10B 12/033 the capacitor extending over the transistor
• CPC Class Codes: H10B 12/05 Making the transistor
• CPC Class Codes: H10B 12/31 having a storage electrode stacked over the transistor
• CPC Class Codes: H10B 12/315 with the capacitor higher than a bit line
• CPC Class Codes: H10B 12/39 the capacitor and the transistor being in a same trench
• CPC Class Codes: H10B 53/30 : characterised by the memory core region

Abstract

A method of forming a tier of an array of memory cells within an array area, the memory cells individually comprising a capacitor and an elevationally-extending transistor, the method comprising using two, and only two, sacrificial masking steps within the array area of the tier in forming the memory cells. Other methods are disclosed, as are structures independent of method of fabrication.

Claims

1-74. -74. (canceled)

75. A tier of memory cells comprising:

a first memory cell and a second memory cell laterally adjacent the first memory cell;

the first memory cell comprising;

a first capacitor and a first vertical transistor;

the first vertical transistor comprising a first pillar comprising a channel and a region comprising conductively doped polysilicon above the channel of the first vertical transistor, the channel of the first vertical transistor being above and electrically coupled to a digit line; and

the first capacitor comprising a first bottom electrode directly against a lateral side of the region comprising the conductively doped polysilicon of the first vertical transistor;

the second memory cell comprising;

a second capacitor and a second vertical transistor;

the second vertical transistor comprising a second pillar comprising a channel and a region comprising conductively doped polysilicon above the channel of the second vertical transistor, the channel of the second vertical transistor being above and electrically coupled to the digit line; and

the second capacitor comprising a second bottom electrode directly against a lateral side of the region comprising the conductively doped polysilicon of the second vertical transistor; and

the first capacitor and the second capacitor sharing a common top electrode.

76. The tier of memory cells of claim 75 wherein at least a portion of a gate of the first vertical transistor and at least a portion of a gate of the second vertical transistor are laterally between the channel of the first vertical transistor and the channel of the second vertical transistor, the gate of the first vertical transistor being separated from the gate of the second vertical transistor by an insulative material.

77. The tier of memory cells of claim 75 wherein each of the first bottom electrode and the second bottom electrode is a cylinder.

78. The tier of memory cells of claim 77 wherein each of the cylinders is an upwardly open cylinder.

79. The tier of memory cells of claim 77 wherein each of the cylinders is a downwardly open cylinder.

80. The tier of memory cells of claim 77 wherein each of the cylinders is an upwardly open and downwardly open cylinder.

81. The tier of memory cells of claim 75 wherein,

the channel of the first vertical transistor has a vertical sidewall that is aligned with a vertical sidewall of the region comprising the conductively doped polysilicon of the first transistor;

and

the channel of the second vertical transistor has a vertical sidewall that is aligned with a vertical sidewall of the region comprising the conductively doped polysilicon of the second transistor.

82. The tier of memory cells of claim 75 wherein,

the channel of the first vertical transistor has a vertical sidewall that is aligned with a vertical sidewall of the first bottom electrode;

and

the channel of the second vertical transistor has a vertical sidewall that is aligned with a vertical sidewall of the second bottom electrode.

83. The tier of memory cells of claim 82 wherein,

the vertical sidewall of the channel of the first vertical transistor is aligned with a vertical sidewall of the region comprising the conductively doped polysilicon of the first transistor;

and

the vertical sidewall of the channel of the second vertical transistor is aligned with a vertical sidewall of the region comprising the conductively doped polysilicon of the second transistor.

84. The tier of memory cells of claim 75 wherein the first and the second bottom electrodes comprise TiN.

85. The tier of memory cells of claim 75 wherein,

each of the channel of the first vertical transistor and the channel of the second vertical transistor has a pair of laterally opposing sides;

each of the first vertical transistor and the second vertical transistor comprises a gate;

the gate of the first vertical transistor being laterally over each of the pair of laterally opposing sides of the channel of the first vertical transistor; and

the gate of the second vertical transistor being laterally over each of the pair of laterally opposing sides of the channel of the second vertical transistor.

86. The tier of memory cells of claim 85 wherein,

the gate of the first vertical transistor does not radially surround the channel of the first vertical transistor;

and

the gate of the second vertical transistor does not radially surround the channel of the second vertical transistor.

87. The tier of memory cells of claim 75 wherein each of the first vertical transistor and the second vertical transistor comprises a gate comprising TiN.

88. The tier of memory cells of claim 75 comprising a capacitor insulator between the first bottom electrode and the common top electrode and between the second bottom electrode and the common top electrode, the capacitor insulator being across tops of the first and second pillars, the common top electrode being across the tops of the first and second pillars above the capacitor insulator that is across the tops of the first and second pillars.

89. The tier of memory cells of claim 75 wherein each of the first vertical transistor and the second vertical transistor comprises a gate, the region comprising the conductively doped polysilicon of each of the first and second vertical transistors having a top that is higher than a top of each of the gates.

90. The tier of memory cells of claim 75 wherein,

the first bottom electrode surrounds and is directly against all uppermost lateral sides of the region comprising the conductively doped polysilicon of the first vertical transistor;

and

the second bottom electrode surrounds and is directly against all uppermost lateral sides of the region comprising the conductively doped polysilicon of the second vertical transistor.

91. The tier of memory cells of claim 75 wherein each of the region comprising the conductively doped polysilicon of each of the first and second vertical transistors has a top, the common top electrode comprising at least a portion thereof that is lower than the top of each of the first and second vertical transistors.

92. The tier of memory cells of claim 75 wherein the first and second memory cells each have a total of only one transistor and a total of only one capacitor.

93. The tier of memory cells of claim 75 wherein the first and second memory cells each have a total of only two transistors and a total of only one capacitor.

94. A tier of memory cells comprising:

a first memory cell and a second memory cell laterally adjacent the first memory cell;

the first memory cell comprising;

a first capacitor and a first vertical transistor;

the first vertical transistor comprising a first pillar comprising a channel and a region comprising conductively doped polysilicon above the channel of the first vertical transistor, the channel of the first vertical transistor being above and electrically coupled to a digit line; and

the first capacitor comprising a first bottom electrode directly against a lateral side of the region comprising the conductively doped polysilicon of the first vertical transistor;

the second memory cell comprising;

a second capacitor and a second vertical transistor;

the second vertical transistor comprising a second pillar comprising a channel and a region comprising conductively doped polysilicon above the channel of the second vertical transistor, the channel of the second vertical transistor being above and electrically coupled to the digit line; and

the second capacitor comprising a second bottom electrode directly against a lateral side of the region comprising the conductively doped polysilicon of the second vertical transistor;

the first capacitor and the second capacitor sharing a common top electrode; and

the first bottom electrode and the second bottom electrode each having a planar top, the planar tops of the first and second bottom electrodes being coplanar, the conductively doped polysilicon of each of the first and second vertical transistors having a planar top that is coplanar with the planar tops of each of the first and second bottom electrodes.

95. The tier of memory cells of claim 94 wherein the planar tops of the first and second bottom electrodes have the same width.

96. The tier of memory cells of claim 94 wherein the planar tops of the conductively doped polysilicon of the first and second vertical transistors have the same width.

97. The tier of memory cells of claim 96 wherein the planar tops of the first and second bottom electrodes have the same width that is different from said same width of said planar tops of the first and second bottom electrodes.

98. The tier of memory cells of claim 97 wherein said same width of the planar tops of the first and second bottom is less than said same width of said planar tops of the first and second bottom electrodes.

99. The tier of memory cells of claim 94 wherein the planar tops of the conductively doped polysilicon of the first and second vertical transistors have the same width.

100. The tier of memory cells of claim 99 wherein each of the first bottom electrode and the second bottom electrode is a cylinder.

101. The tier of memory cells of claim 99 wherein each of the cylinders is an upwardly open cylinder.

102. The tier of memory cells of claim 99 wherein each of the cylinders is a downwardly open cylinder.

103. The tier of memory cells of claim 99 wherein each of the cylinders is an upwardly open and downwardly open cylinder.

104. The tier of memory cells of claim 94 wherein,

the channel of the first vertical transistor has a vertical sidewall that is aligned with a vertical sidewall of the region comprising the conductively doped polysilicon of the first transistor;

and

the channel of the second vertical transistor has a vertical sidewall that is aligned with a vertical sidewall of the region comprising the conductively doped polysilicon of the second transistor.

105. The tier of memory cells of claim 94 wherein,

the channel of the first vertical transistor has a vertical sidewall that is aligned with a vertical sidewall of the first bottom electrode;

and

the channel of the second vertical transistor has a vertical sidewall that is aligned with a vertical sidewall of the second bottom electrode.

106. The tier of memory cells of claim 94 wherein,

each of the channel of the first vertical transistor and the channel of the second vertical transistor has a pair of laterally opposing sides;

each of the first vertical transistor and the second vertical transistor comprises a gate;

the gate of the first vertical transistor being laterally over each of the pair of laterally opposing sides of the channel of the first vertical transistor; and

the gate of the second vertical transistor being laterally over each of the pair of laterally opposing sides of the channel of the second vertical transistor.

107. The tier of memory cells of claim 106 wherein,

the gate of the first vertical transistor does not radially surround the channel of the first vertical transistor;

and

the gate of the second vertical transistor does not radially surround the channel of the second vertical transistor.

108. A tier of memory cells comprising:

a first memory cell and a second memory cell laterally adjacent the first memory cell;

the first memory cell comprising;

a first capacitor and a first vertical transistor;

the first vertical transistor comprising a first pillar comprising a channel and a region comprising conductively doped polysilicon above the channel of the first vertical transistor, the channel of the first vertical transistor being above and electrically coupled to a digit line; and

the first capacitor comprising a first bottom electrode directly against a lateral side of the region comprising the conductively doped polysilicon of the first vertical transistor;

the second memory cell comprising;

a second capacitor and a second vertical transistor;

the second vertical transistor comprising a second pillar comprising a channel and a region comprising conductively doped polysilicon above the channel of the second vertical transistor, the channel of the second vertical transistor being above and electrically coupled to the digit line; and

the second capacitor comprising a second bottom electrode directly against a lateral side of the region comprising the conductively doped polysilicon of the second vertical transistor;

the first capacitor and the second capacitor sharing a common top electrode; and

each of the first bottom electrode and the second bottom electrode comprises a cylinder, and further comprising;

a capacitor insulator between the first bottom electrode and the common top electrode and between the second bottom electrode and the common top electrode; and

the capacitor insulator and the common top electrode being on internal and external sides of the cylinder of each of the first and second bottom electrodes

109. The tier of memory cells of claim 108 wherein each of the cylinders is an upwardly open cylinder.

110. The tier of memory cells of claim 108 wherein each of the cylinders is a downwardly open cylinder.

111. The tier of memory cells of claim 108 wherein each of the cylinders is an upwardly open and downwardly open cylinder.

112. The tier of memory cells of claim 108 wherein,

the channel of the first vertical transistor has a vertical sidewall that is aligned with a vertical sidewall of the region comprising the conductively doped polysilicon of the first transistor;

and

the channel of the second vertical transistor has a vertical sidewall that is aligned with a vertical sidewall of the region comprising the conductively doped polysilicon of the second transistor.

113. The tier of memory cells of claim 108 wherein,

the channel of the first vertical transistor has a vertical sidewall that is aligned with a vertical sidewall of the first bottom electrode;

and

the channel of the second vertical transistor has a vertical sidewall that is aligned with a vertical sidewall of the second bottom electrode.

114. The tier of memory cells of claim 108 wherein,

each of the channel of the first vertical transistor and the channel of the second vertical transistor has a pair of laterally opposing sides;

each of the first vertical transistor and the second vertical transistor comprises a gate;

the gate of the first vertical transistor being laterally over each of the pair of laterally opposing sides of the channel of the first vertical transistor; and

the gate of the second vertical transistor being laterally over each of the pair of laterally opposing sides of the channel of the second vertical transistor.

115. The tier of memory cells of claim 114 wherein,

the gate of the first vertical transistor does not radially surround the channel of the first vertical transistor;

and

the gate of the second vertical transistor does not radially surround the channel of the second vertical transistor.