GATE STACK OPTIMIZATION FOR WIDE AND NARROW NANOSHEET TRANSISTOR DEVICES
First Claim
1. A method of forming a nanosheet device, comprising:
- forming a plurality of narrow nanosheets on a first region of a substrate;
forming a plurality of wide nanosheets on a second region of the substrate;
forming an interfacial layer on the plurality of narrow nanosheets and the plurality of wide nanosheets;
depositing a gate dielectric layer on the plurality of narrow nanosheets and the plurality of wide nanosheets;
depositing a dummy gate layer on the gate dielectric layer on the plurality of narrow nanosheets and the plurality of wide nanosheets; and
forming a dummy cover layer on the dummy gate layer on the plurality of narrow nanosheets and the plurality of wide nanosheets.
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Abstract
A method of forming a nanosheet device is provided. The method includes forming a plurality of narrow nanosheets on a first region of a substrate, and forming a plurality of wide nanosheets on a second region of the substrate. The method further includes forming an interfacial layer on the plurality of narrow nanosheets and the plurality of wide nanosheets. The method further includes depositing a gate dielectric layer on the plurality of narrow nanosheets and the plurality of wide nanosheets. The method further includes depositing a dummy gate layer on the gate dielectric layer on the plurality of narrow nanosheets and the plurality of wide nanosheets. The method further includes forming a dummy cover layer on the dummy gate layer on the plurality of narrow nanosheets and the plurality of wide nanosheets.
15 Citations
20 Claims
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1. A method of forming a nanosheet device, comprising:
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forming a plurality of narrow nanosheets on a first region of a substrate; forming a plurality of wide nanosheets on a second region of the substrate; forming an interfacial layer on the plurality of narrow nanosheets and the plurality of wide nanosheets; depositing a gate dielectric layer on the plurality of narrow nanosheets and the plurality of wide nanosheets; depositing a dummy gate layer on the gate dielectric layer on the plurality of narrow nanosheets and the plurality of wide nanosheets; and forming a dummy cover layer on the dummy gate layer on the plurality of narrow nanosheets and the plurality of wide nanosheets. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of forming a nanosheet device, comprising:
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forming a plurality of narrow nanosheets on a first region of a substrate; forming a plurality of wide nanosheets on a second region of the substrate; forming an interfacial layer on each of the plurality of narrow nanosheets and the plurality of wide nanosheets, wherein the interfacial layer is a semiconductor oxide; depositing a gate dielectric layer on the plurality of narrow nanosheets and the plurality of wide nanosheets; depositing a dummy gate layer on the gate dielectric layer on the plurality of narrow nanosheets and the plurality of wide nanosheets; and forming a dummy cover layer on the dummy gate layer on the plurality of narrow nanosheets and the plurality of wide nanosheets, wherein the dummy cover layer is the same material as the dummy gate layer. - View Dependent Claims (12, 13, 14, 15)
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16. A nanosheet device, comprising:
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a plurality of narrow nanosheets on a first region of a substrate; a plurality of wide nanosheets on a second region of the substrate, wherein adjacent narrow nanosheets of the plurality of narrow nanosheets on the first region of a substrate and the adjacent wide nanosheets of the plurality of wide nanosheets on the second region of a substrate are separated by a distance, D1, in a range of about 5.5 nm to about 17.5 nm; an interfacial layer on the plurality of narrow nanosheets and the plurality of wide nanosheets; a gate dielectric layer on the plurality of narrow nanosheets and the plurality of wide nanosheets; and a conductive gate layer on the gate dielectric layer. - View Dependent Claims (17, 18, 19, 20)
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Specification