SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming a first conductor;
forming a first insulator over the first conductor;
performing first heat treatment after the first insulator is formed;
forming a first oxide over the first insulator;
forming a second oxide over the first oxide at a substrate temperature of higher than or equal to 100°
C. and lower than 140°
C. with a proportion of an oxygen gas of higher than or equal to 0% and lower than or equal to 30%;
forming a second conductor and a third conductor over the second oxide so that the second conductor and the third conductor are separate from each other;
forming a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor at a substrate temperature of higher than or equal to room temperature and lower than 200°
C. with a proportion of an oxygen gas of higher than or equal to 70% to cover the first oxide and the second oxide;
forming a second insulator over the third oxide;
performing second heat treatment after the second insulator is formed;
forming a fourth conductor over the second insulator;
performing third heat treatment after the fourth conductor is formed;
etching part of the fourth conductor selectively after the third heat treatment to form a fifth conductor at least part of which overlaps with the second oxide; and
forming a third insulator over the first insulator, the second insulator, and the fifth conductor.
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Accused Products
Abstract
A semiconductor device includes a first conductor; a first insulator thereover; a first oxide thereover; a second oxide thereover; a second conductor and a third conductor that are separate from each other thereover; a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor; a second insulator thereover; a fourth conductor thereover; and a third insulator over the first insulator, the second insulator, and the fourth conductor. The second oxide includes a region where the energy of the conduction band minimum of an energy band is low and a region where the energy of the conduction band minimum of the energy band is high. The energy of the conduction band minimum of the third oxide is higher than that of the region of the second oxide where the energy of the conduction band minimum is low. Side surfaces of the first oxide and the second oxide are covered with the third oxide.
5 Citations
18 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a first conductor; forming a first insulator over the first conductor; performing first heat treatment after the first insulator is formed; forming a first oxide over the first insulator; forming a second oxide over the first oxide at a substrate temperature of higher than or equal to 100°
C. and lower than 140°
C. with a proportion of an oxygen gas of higher than or equal to 0% and lower than or equal to 30%;forming a second conductor and a third conductor over the second oxide so that the second conductor and the third conductor are separate from each other; forming a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor at a substrate temperature of higher than or equal to room temperature and lower than 200°
C. with a proportion of an oxygen gas of higher than or equal to 70% to cover the first oxide and the second oxide;forming a second insulator over the third oxide; performing second heat treatment after the second insulator is formed; forming a fourth conductor over the second insulator; performing third heat treatment after the fourth conductor is formed; etching part of the fourth conductor selectively after the third heat treatment to form a fifth conductor at least part of which overlaps with the second oxide; and forming a third insulator over the first insulator, the second insulator, and the fifth conductor. - View Dependent Claims (2, 3, 4, 5)
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6. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a first conductor; forming a first insulator over the first conductor; performing first heat treatment after the first insulator is formed; forming a first oxide over the first insulator; forming a second oxide over the first oxide; forming a second conductor and a third conductor over the second oxide; forming a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor; forming a second insulator over the third oxide; performing second heat treatment after the second insulator is formed; forming a fourth conductor over the second insulator; performing third heat treatment after the fourth conductor is formed; etching part of the fourth conductor selectively after the third heat treatment to form a fifth conductor at least part of which overlaps with the second oxide; and forming a third insulator over the first insulator, the second insulator, and the fifth conductor, wherein the second oxide comprises a first region where an energy of a conduction band minimum of an energy band is low and a second region where an energy of a conduction band minimum of an energy band is high. - View Dependent Claims (7, 8, 9, 10)
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11. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a first conductor; forming a first insulator over the first conductor; forming a first oxide over the first insulator; forming a second oxide over the first oxide; forming a second conductor and a third conductor over the second oxide; forming a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor; forming a second insulator over the third oxide; forming a fourth conductor over the second insulator; etching part of the fourth conductor selectively to form a fifth conductor at least part of which overlaps with the second oxide; and forming a third insulator over the first insulator, the second insulator, and the fifth conductor. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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Specification