• US 20200176486A1
  • Filed: 02/03/2020
  • Published: 06/04/2020
  • Est. Priority Date: 11/06/2009
  • Status: Active Grant
First Claim
Patent Images

1. A method for fabricating a semiconductor device comprising the steps of:

  • forming a gate electrode layer;

    forming a gate insulating layer;

    forming an oxide semiconductor layer, in which a channel is formed, overlapping with the gate electrode layer with the gate insulating layer provided therebetween; and

    forming a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer,wherein the oxide semiconductor layer comprises indium, gallium, and zinc,wherein the oxide semiconductor layer is formed by a sputtering method,wherein the oxide semiconductor layer comprises a crystal region including a crystal with a particle size greater than or equal to 1 nm and less than or equal to 20 nm in a surface portion, andwherein the crystal region has c-axis alignment.

View all claims

    Thank you for your feedback