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METHOD OF MAKING THERMO-COMPRESSION-BONDED SEMICONDUCTOR DEVICE

  • US 3,729,807 A
  • Filed: 10/29/1971
  • Issued: 05/01/1973
  • Est. Priority Date: 10/30/1970
  • Status: Expired due to Term
First Claim
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2. The method of claim 1, wherein said vapor-deposited layer is a layer of an alloy of gold containing 1 to 10 percent of chromium by weight.

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