MIS-FETs isolated on common substrate

• US 4,015,281 A
• Filed: 03/05/1971
• Issued: 03/29/1977
• Est. Priority Date: 03/30/1970
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Kubo, Masaharu, Nagata, Minoru, Hashimoto, Norikazu, Masuhara, Toshiaki
• Primary Examiner(s): Edlow, Martin H.
• Application Number:
  US05/121,375
• Time in Patent Office: 2,216 Days
• Field of Search: 317/235 AZ, 317/235 G, 317/235 B
• US Class Current: 257/392
• CPC Class Codes: H01L 21/765 by field effect H01L21/76264 takes precedence
• CPC Class Codes: H01L 27/0883 Combination of depletion and enhancement field effect transistors
• CPC Class Codes: H01L 29/511 with a compositional variation, e.g. multilayer structures H01L29/516 takes precedence

Abstract

An enhancement-type and a depletion-type metal-insulator-semiconductor field effect transistor are formed on a common substrate of silicon and are electrically isolated from each other by a plurality of layers including, for example, a first layer of SiO₂, a second layer of Al₂ O₃ capable of inducing holes in the surface portion of the substrate, and a third layer of SiO₂, and the relation between the thicknesses of these layers is suitably selected for attaining the satisfactory isolation between these transistors.

Claims

1. A semiconductor device comprising:

a. a semiconductor substrate of p-conductivity type having at least one planar surface;

b. a first n-channel insulated-gate field effect transistor disposed on the planar surface of said semiconductor substrate, and having spaced first source and first drain regions of n-conductivity type in the surface of said substrate, a first channel portion of said substrate intermediate said first source and first drain regions, a first gate insulator layer on said first channel portion and a first gate electrode on said first gate insulator layer, the first gate insulator layer being of a film which has a thickness less than 2000 A and is selected from the group consisting of an SiO₂ film and a composite film of an SiO₂ layer and a phosphosilicate glass layer, so that said first transistor is of depletion type; and

c. a second n-channel insulated-gate field effect transistor disposed on the planar surface of said semiconductor substrate in spaced relation from said first transistor, said second transistor having spaced second source and second drain regions of n-conductivity type in the surface of said substrate, a second channel portion of said substrate intermediate said second source and second drain regions, a second gate insulator layer on said second channel portion and a second gate electrode on said second gate insulator layer, the second gate insulator layer including a first film which has a thickness less 2000 A and is selected from the group consisting of an SiO₂ film and a composite film of an SiO₂ layer and a phosphosilicate glass layer and a second film Al₂ O₃ which has an effective oxide thickness one-half to five times that of said first film, said second gate insulator layer being capable of inducing holes in the second channel portion, so that said second transistor is of enhancement type;

wherein the improvement comprises

isolating film means disposed on a planar surface portion of said semiconductor substrate intermediate said first source and first drain regions of said first transistor and said second source and second drain regions of said second transistor for inducing holes in the surface portion of said substrate, the total effective oxide thickness of said isolating film means being more than two times that of the second gate insulator layer of said second transistor, thereby electrically isolating said first insulated-gate field effect transistor from said second insulated-gate field effect transistor, in which said isolating film means comprises a first film disposed on the surface portion of said substrate and selected from the group consisting of a film of Al₂ O₃ and a film of silicon dioxide formed through thermal decomposition of tetraethoxy silane and a second film disposed on the first film and selected from the group consisting of a film of SiO₂ and a double-layer film consisting of a layer of SiO₂ and a layer of phosphosilicate glass.

2. A semiconductor device comprising:

a. a semiconductor substrate of p-conductivity type having at least one planar surface;

b. a first n-channel insulated-gate field effect transistor disposed on the planar surface of said semiconductor substrate, and having spaced first source and first drain regions of n-conductivity type in the surface of said substrate, a first channel portion of said substrate intermediate said first source and first drain regions, a first gate insulator layer on said first channel portion and a first gate electrode on said first gate insulator layer, the first gate insulator layer being of a film which has a thickness less than 2000 a and is selected from the group consisting of an SiO₂ film and a composite film of an SiO₂ layer and a phosphosilicate glass layer, so that said first transistor is of depletion type; and

c. a second n-channel insulated-gate field effect transistor disposed on the planar surface of said semiconductor substrate in spaced relation from said first transistor, said second transistor having spaced second source and second drain regions of n-conductivity type in the surface of said substrate, a second channel portion of said substrate intermediate said second source and second drain regions, a second gate insulator layer on said second channel portion and a second gate electrode on said second gate insulator layer, the second gate insulator layer including a first film which has a thickness less 2000 A and is selected from the group consisting of an SiO₂ film and a composite film of an SiO₂ layer and a phosphosilicate glass layer and a second film Al₂ O₃ which has an effective oxide thickness one-half to five times that of said first film, said second gate insulator layer being capable of inducing holes in the second channel portion, so that said second transistor is of enhancement type;

wherein the improvement comprises

isolating film means disposed on a planar surface portion of said semiconductor substrate intermediate said first source and first drain regions of said first transistor and said second source and second drain regions of said second transistor for inducing holes in the surface portion of said substrate, the total effective oxide thickness of said isolating film means being more than two times that of the second gate insulator layer of said second transistor, thereby electrically isolating said first insulated-gate field effect transistor from said second insulated-gate field effect transistor, in which said isolating film means is composed of a double-layer of Al₂ O₃ and SiO₂, said layer of Al₂ O₃ being directly disposed on the surface porton of said substrate, said layer of SiO₂ being disposed on the layer of Al₂ O₃.

3. A semiconductor device having:

a semiconductor substrate of p-conductivity type having one planar surface, and

a plurality of n-channel insulated-gate field effect transistors disposed on the planar surface of said substrate in spaced relation from each other,

each of said transistors having spaced source and drain regions of n-conductivity type in the planar surface of said substrate, a channel portion of said substrate intermediate said source and drain regions, a gate insulator layer on said channel portion and a gate electrode on said insulator layer,

the gate insulator layer of one of said transistors having a property capable of inducing holes in the channel portion thereof, so that said one transistor is of enhancement type,

wherein the improvement comprises;

isolating film means disposed on an isolating surface portion of said substrate intermediate any two of said transistors for inducing holes in the isolating surface portion of said substrate thereunder,

said isolating film means having an effective oxide thickness more than two times that of said gate insulator layer of said one transistor,

to thereby electrically isolate any two of said transistors from each other,

wherein said isolating film means comprises a layer of Al₂ O₃ formed directly on said substrate and an SiO₂ layer formed thereon.

4. A semiconductor device according to claim 3 wherein said one transistor includes a first layer consisting of a material selected from SiO₂ and SiO₂ plus phosphosilicate glass and a second layer of Al₂ O₃.