Balanced transversal filter

• US 4,032,867 A
• Filed: 09/02/1975
• Issued: 06/28/1977
• Est. Priority Date: 09/02/1975
• Status: Expired due to Term

• Current Assignee: Lockheed Martin Corporation (Martin Marietta Corporation)
• Original Assignee: General Electric Company
• Inventors: Baertsch, Richard D., Engeler, William E.
• Primary Examiner(s): Gensler, Paul L.
• Assistant Examiner(s): Nussbaum, Marvin
• Application Number:
  US05/609,415
• Time in Patent Office: 665 Days
• Field of Search: 333/70 T, 307/221 R, 307/221 C, 307/221 D, 307/208, 357/24, 328/167
• US Class Current: 333/165
• CPC Class Codes: H01L 29/76866 Surface Channel CCD
• CPC Class Codes: H03H 15/02 using analogue shift registers

Abstract

In a charge transfer transversal filter a semiconductor substrate is provided with main and parallel portions. A group of serially arranged electrodes insulatingly overlie and are uniformly spaced from the channel portions. The electrodes form with the substrate a plurality of stages of first and second charge transfer shift register over the main and parallel channel portions of the substrate, respectively. One electrode of each of the stages of the shift registers has a split along the length dimension thereof over the main channel portion dividing each of the one electrodes over the main channel portion into a first part and a second part with a third part overlying the parallel channel portion. The first parts of the one electrodes are connected to a first conductive line and the second and third parts of the one electrodes are connected to a second conductive line. The area of the first parts of the one electrodes being equal to the sum of the areas of the second and third parts of the one electrode.

Claims

1. A transversal filter comprising

a substrate of semiconductor material including a first channel portion adjacent a major surface of said substrate and a second channel portion adjacent said major surface,

a group of electrodes insulatingly overlying each of said channel portions,

said group of electrodes forming with said substrate a portion of a first charge transfer shift register over said first channel portion and a portion of a second charge transfer shift register over said second channel portion,

each of said electrodes having a split over said first channel portion dividing each of said electrodes over said first channel portion into a first part and a second part, the portion of each of said electrodes overlying said second channel portion constituting a third part thereof,

a first conductive line connected to the first parts of said electrodes,

a second conductive line connected to the second parts of said electrodes,

the capacitance of the first parts of said electrodes being equal to the sum of the capacitances of the second and third parts of said electrodes.

2. The filter of claim 1 in which said first and second channel portions are of uniform width, the width of said second portion w being related to the sum of the widths of said first and second parts w_c of said electrodes according to the following equation:

##EQU5## where W_n is the normalized tap weight of the n^th tap.

3. The filter of claim 1 in which said electrodes are uniformly spaced with respect to said major surface and in which the area of the first parts of said electrodes are equal to the sum of the areas of the second and third parts of said electrodes.

4. A transversal filter comprising,

a substrate of one conductivity type semiconductor material including a first channel portion of uniform width adjacent a major surface of said substrate and a second channel portion adjacent said major surface parallel to said first channel portion and of uniform width,

an insulator member overlying said major surface, and having uniform thickness over said first and second channel portions,

a group of serially arranged electrodes lying on said insulating member, overlying said channel portions and orthogonal to the length thereof, said electrodes being of uniform length measured along the length dimension of said channels,

said electrodes forming with said substrate a plurality of stages of a first charge coupled shift register over said first channel portion and a like plurality of stages of a second charge coupled shift register over said second channel portion, each stage of each of said shift registers including a like number of electrodes,

one electrode of each of said stages of said shift registers having a split along the length dimension thereof over said first channel portion to divide said one electrode over said first channel portion into a first part and a second part, the portion of said one electrode overlying said second channel portion constituting a third part thereof,

a first-conductive line connected to the first parts of said one electrodes,

a second conductive line connected to the second and third parts of said one electrodes,

the sum of the areas of the first parts of said one electrodes being equal to the sum of the areas of the second and third parts of said one electrodes.

5. The combination of claim 4 in which said group of electrodes are divided into a first and a second plurality, said first plurality consisting of said one electrodes of said stages, said second plurality including other electrodes of said group, each of said electrodes of said second plurality spaced between adjacent electrodes of said first plurality.

6. The combination of claim 4 in which said group of electrodes comprises

first, second and third pluralities of electrodes, said first plurality functioning to store and transfer charge and consisting of said one electrodes of said stages, said second plurality functioning to store and transfer charge, each of said electrodes of said second plurality spaced between adjacent electrodes of said first plurality, said third plurality functioning as charge transfer electrodes, each insulatingly overlying a respective adjacent pair of electrodes of said first and second pluralities.

7. The combination of claim 4 including

means for applying phase related voltages to each of the stages of each of said shift registers to effect transfer of charge from stage to stage of each of said shift registers, the same voltage being applied to said first and second lines,

means for applying a first bias charge of fixed level to said first shift register,

means for applying a second bias charge of said fixed level to said second shift register,

means for superimposing a charge level on said first bias level of said first shift register varying in accordance with successive samples of an analog signal,

differential sensing means connected between said first and second lines for detecting the difference in signal on said lines in response to the transfer of charge from stage to stage of each of said shift registers,

whereby an output signal representing the convolution of the tap weights of the stages of the shift register with the signal samples is obtained.

8. A charge transfer device comprising

a substrate of semiconductor material including a first channel portion adjacent a major surface of said substrate and a second channel portion adjacent said major surface,

a group of electrodes insulatingly overlying said channel portions and generally orthogonal to the length thereof,

said groups of electrodes forming with said substrate a portion of a first charge transfer shift register over said first channel portion and a portion of a second charge transfer shift register over said second channel portion,

at least one electrode of said group having a split along the length dimension thereof over said first channel portion dividing said one electrode over said first channel portion into a first part and a second part, the portion of said one electrode overlying said second channel portion constituting a third part thereof,

said one electrode being uniformly spaced over said first and second channel portions,

the area of the first part of said one electrode being equal to the sum of the areas of the second and third parts of said one electrode.