Semiconductor radiation detector

  • US 4,210,805 A
  • Filed: 02/15/1978
  • Issued: 07/01/1980
  • Est. Priority Date: 02/17/1977
  • Status: Expired due to Term
First Claim
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1. A semiconductor radiation detector comprising a detector unit including a detection element having a single crystal silicon substrate with an impurity concentration of less than 1×

  • 1014 cm-3, a metal layer formed on one surface of the substrate to provide a surface barrier between the metal layer and the substrate, the surface barrier having a rectifying characteristic, and an electrode layer formed on the other surface of the substrate, and an output circuit connected to the metal layer and electrode layer of the detection element to obtain an output corresponding to an amount of X-ray or gamma ray radiation incident on the detector unit without the application of a bias across the detection element.

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