Sensing amplifier for floating gate memory devices

  • US 4,223,394 A
  • Filed: 02/13/1979
  • Issued: 09/16/1980
  • Est. Priority Date: 02/13/1979
  • Status: Expired due to Term
First Claim
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1. An amplifier for sensing the binary state of a first MOS floating gate memory device comprising:

  • a line coupled to said first device;

    a first biasing means coupled to said line for charging said line to a first potential when said first device is in one binary state and for preventing said line from dropping below a second potential when said first device is in its other binary state;

    a second floating gate memory device substantially identical to said first device for providing a reference load;

    a biasing circuit coupled to said second device for biasing said second device at a predetermined level;

    a second biasing means coupled to said second device for providing a reference potential;

    comparator means for comparing potentials, said comparator means coupled to said line and coupled to receive said reference potential;

    whereby said amplifier senses said binary state of said first device and is quickly able to again sense the binary state of said first device since said line is prevented from discharging by said first biasing means.

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