Alternating polarity power supply control apparatus

• US 4,256,977 A
• Filed: 12/26/1978
• Issued: 03/17/1981
• Est. Priority Date: 12/26/1978
• Status: Expired due to Term

• Current Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Original Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Inventors: Hendrickson, Thomas E.
• Primary Examiner(s): Miller, Jr., Stanley D.
• Assistant Examiner(s): Davis, B. P.
• Application Number:
  US05/973,215
• Time in Patent Office: 812 Days
• Field of Search: 307/251, 307/279, 307/304, 307/268, 357/22, 357/23
• US Class Current: 327/434
• CPC Class Codes: H03K 17/687 the devices being field-effect transistors

Abstract

An electronic switching circuit is provided for controlling transfer of electrical power from an alternating polarity electrical power supply to a load means through use of a field-effect transistor device as the primary power controlling element.

Claims

1. An electronic switching circuit for controlling transfer of electrical power from an alternating polarity electrical power supply means to a load means, said switching circuit comprising:

a first transfer control field-effect device provided in and on a first substrate, said first transfer control field-effect device comprising;

a first transfer control field-effect device channel region located at least in part in a first selected region of said first substrate;

first transfer control field-effect device first and second terminating regions, separated by said first transfer control field-effect device channel region, into which and out of which primary currents through said first field-effect device can, at least in part, pass upon electrical energization of said first transfer control field-effect device first and second terminating regions, said first field-effect device first terminating region being electrically connected to a first terminal means adapted for electrical connection to a first circuit portion arrangement which includes both said alternating polarity electrical power supply means and said load means, and said first field-effect device second terminating region being electrically connected to a second terminal means adapted for electrical connection to said first circuit portion arrangement; and

a first transfer control field-effect device gate region capable of affecting, upon electrical energization thereof, any current flow occurring through said first transfer control field-effect device channel region as a result of electrical energization of said first transfer control field-effect device first and second terminating regions;

an energy storage means having first and second polarity regions between which said energy storage means is capable of providing electrical energy storage, said energy storage means first polarity region being electrically connected to said first substrate;

a first unidirectional current conducting means having therein first and second terminating regions between which an asymmetrical current conducting capability is exhibited, said first unidirectional current conducting means first terminating region being electrically connected to said energy storage means second polarity region, and said first unidirectional current conducting means second terminating region being electrically connected to one of said first and second terminal means; and

a control switch means capable, upon activation, of effectively electrically connecting said first transfer control field-effect device gate region to a selected one of (i) said first substrate, and (ii) said first unidirectional current conducting means first terminating region, whereby electrical power can be selectively transferred from said alternating polarity electrical power supply means to said load means in correspondence with said selection of electrical connection for said first transfer control field-effect device gate region.

2. The apparatus of claim 1 wherein a second unidirectional current conducting means is provided having therein first and second terminating regions between which an asymmetrical current conducting capability is exhibited, said second unidirectional current conducting means first terminating region being electrically connected to said first unidirectional current conducting means first terminating region, and said second unidirectional current conducting means second terminating region being electrically connected to that one of said first and second terminal means opposite that to which said first unidirectional current conducting means second terminating region is connected as aforesaid.

3. The apparatus of claim 1 wherein said first circuit portion arrangement comprises at least a portion of said load means being electrically connected to a third terminal means adapted for electrical connection to said alternating polarity electrical power supply means, and wherein one of said first and second terminal means is electrically connected to said portion of said load means, and wherein a second unidirectional current conducting means is provided having first and second terminating regions between which an asymmetrical current conducting capability is exhibited, said second unidirectional current conducting means first terminating region being electrically connected to said first unidirectional current conducting means first terminating region and said second unidirectional current conducting means second terminating region being electrically connected to said third terminal means.

4. The apparatus of claim 1 wherein said switch control means comprises first and second signal controlled field-effect transistors, each of said first and second signal controlled field-effect transistors having first and second terminating regions separated by channel regions and each having a gate region, said first signal controlled field-effect transistor second terminating region being electrically connected to both said second signal controlled field-effect transistor first terminating region and to said first transfer control field-effect device gate region, said first signal controlled field-effect transistor first terminating region being electrically connected to said first substrate and said second signal controlled field-effect transistor second terminating region being electrically connected to said first unidirectional current means first terminating region.

5. The apparatus of claim 1 wherein said energy storage means is a capacitance means.

6. The apparatus of claim 1 wherein said energy storage means is a means through which at least some electrical power can be supplied to said switching circuit from an electrical power source other than said alternating polarity electrical power supply means upon electrical energization of said energy storage means by said other source.

7. The apparatus of claim 1 wherein said circuit further comprises:

said first transfer control field-effect device being effectively an enhancement mode, n-channel, metal-oxide-semiconductor field-effect transistor (MOSFET), with said first transfer control field-effect device first and second terminating regions being source and drain regions therein, and with said first transfer control field-effect device gate region being separated from said first selected region of said first substrate by an insulating layer; and

said first unidirectional current conducting means being a first diode having an anode and a cathode, with first diode anode serving as said first unidirectional current conducting means second terminating region, and with said first diode cathode serving as said first unidirectional current conducting means first terminating region.

8. The apparatus of claim 1 wherein said circuit further comprises said first transfer control field-effect device being effectively a depletion mode, n-channel, field-effect transistor with said first transfer control field-effect device first and second terminating regions being source and drain regions therein.

9. The apparatus of claim 1 wherein said circuit further comprises:

said first transfer control field-effect device being effectively an enhancement mode, p-channel, metal-oxide-semiconductor field-effect transistor (MOSFET), with said first transfer control field-effect device first and second terminating regions being source and drain regions therein, and with said first transfer control field-effect device gate region being separated from said first selected region of said first substrate by an insulating layer; and

said first unidirectional current conducting means being a first diode having an anode and a cathode, with said first diode anode serving as said first unidirectional current conducting means first terminating region, and with said first diode cathode serving as said first unidirectional current conducting means second terminating region.

10. The apparatus of claim 1 wherein said circuit further comprises said first transfer control field-effect device being effectively a depletion mode, p-channel, field-effect transistor with said first transfer controlled field-effect device first and second terminating regions being source and drain regions therein.

11. The apparatus of claim 7 wherein a second unidirectional current conducting means is provided having therein first and second terminating regions between which an asymmetrical current conducting capability is exhibited, said second unidirectional current conducting means first terminating region being electrically connected to said first unidirectional current conducting means first terminating region, and said second unidirectional current conducting means second terminating region being electrically connected to that one of said first and second terminal means opposite that to which said first unidirectional current conducting means second terminating region is connected as aforesaid.

12. The apparatus of claim 7 wherein said first circuit portion arrangement comprises at least a portion of said load means being electrically connected to a third terminal means adapted for electrical connection to said alternating polarity electrical power supply means, and wherein one of said first and second terminal means is electrically connected to said portion of said load means, and wherein a second unidirectional current conducting means is provided having first and second terminating regions between which an asymmetrical current conducting capability means first terminating region being electrically connected to said first unidirectional current conducting capability is exhibited, said second unidirectional current conducting means first terminating region being electrically connected to said first unidirectional current conducting means first terminating region and said second unidirectional current conducting means second terminating region being electrically connected to said third terminal means.

13. The apparatus of claim 7 wherein said switch control means comprises first and second signal controlled field-effect transistors, each of said first and second signal controlled field-effect transistors having first and second terminating regions separated by channel regions and each having a gate region, said first signal controlled field-effect transistor second terminating region being electrically connected to both said second signal controlled field-effect transistor first terminating region and to said first transfer control field-effect device gate region, said first signal controlled field-effect transistor first terminating region being electrically connected to said first substrate and said second signal controlled field-effect transistor second terminating region being electrically connected to said first unidirectional current means first terminating region.

14. The apparatus of claim 7 wherein said energy storage means is a capacitance means.

15. The apparatus of claim 8 wherein said energy storage means is a means through which at least some electrical power can be supplied to said switching circuit from an electrical power source other than said alternating polarity electrical power supply means upon electrical energization of said energy storage means by said other source.

16. The appartus of claim 9 wherein a second unidirectional current conducting means is provided having therein first and second terminating regions between which an asymmetrical current conducting capability is exhibited, said second unidirectional current conducting means first terminating region being electrically connected to said first unidirectional current conducting means first terminating region, and said second unidirectional current conducting means second terminating region being electrically connected to that one of said first and second terminal means opposite that to which said first unidirectional current conducting means second terminating region is connected as aforesaid.

17. The apparatus of claim 9 wherein said first circuit portion arrangement comprises at least a portion of said load means being electrically connected to a third terminal means adapted for electrical connection to said alternating polarity electrical power supply means, and wherein one of said first and second terminal means is electrically connected to said portion of said load means, and wherein a second unidirectional current conducting means is rovided having first and second terminating regions between which an asymmetrical current conducting capability is exhibited, said second unidirectional current conducting means first terminating region being electrically connected to said first unidirectional current conducting means first terminating region and said second unidirectional current conducting means second terminating region being electrically connected to said third terminal means.

18. The apparatus of claim 9 wherein said switch control means comprises first and second signal controlled field-effect transistors, each of said first and second signal controlled field-effect transistors having first and second terminating regions separated by channel regions and each having a gate region, said first signal controlled field-effect transistor second terminating region being electrically connected to both said second signal controlled field-effect transistor first terminating region and to said first transfer control field-effect device gate region, said first signal controlled field-effect transistor first terminating region being electrically connected to said first substrate and said second signal controlled field-effect transistor second terminating region being electrically connected to said first unidirectional current means first terminating region.

19. The apparatus of claim 9 wherein said energy storage means is a capacitance means.

20. The apparatus of claim 10 wherein said energy storage means is a means through which at least some electrical power can be supplied to said switching circuit from an electrical power source other than said alternating polarity electrical power supply means upon electrical energization of said energy storage means by said other source.

21. The apparatus of claim 13 wherein said first and second signal controlled field-effect transistors are each provided in and on said first substrate.

22. The apparatus of claim 18 wherein said first and second signal controlled field-effect transistors are each provided in and on said first substrate.

23. An electronic switching circuit for controlling transfer of electrical power from an alternating polarity electrical power supply means to a load means, said switching circuit comprising:

a first transfer control field-effect device provided in and on a first substrate, said first transfer control field-effect device comprising;

a first transfer control field-effect device channel region located at least in part in a first selected region of said first substrate;

first transfer control field-effect device first and second terminating regions, separated by said first transfer control field-effect device channel region, into which and out of which primary currents through said first field-effect device can, at least in part, pass upon electrical energization of said first transfer control field-effect device first and second terminating regions, said first field-effect device first terminating region being electrically connected to a first terminal means adapted for electrical connection to a first circuit portion arrangement, which includes both said alternating polarity electrical power supply means and said load means, and said first field-effect device second terminating region being electrically connected to a second terminal means adapted for electrical connection to said first circuit portion arrangement; and

a first transfer control field-effect device gate region capable of affecting, upon electrical energization thereof, any current flow occurring through said first transfer control field-effect device channel region as a result of electrical energization of said first transfer control field-effect device first and second terminating regions;

an energy storage means having first and second polarity regions between which said energy storage means is capable of providing electrical energy storage, said energy storage means first polarity region being electrically connected to said first substrate;

a first unidirectional current conducting means having therein first and second terminating regions between which an asymmetrical current conducting capability is exhibited, said first unidirectional current conducting means first terminating region being electrically connected to said energy storage means second polarity region, and said first unidirectional current conducting means second terminating region being electrically connected to a third terminal means adapted for electrical connection to both said alternating polarity electrical power supply means and said load means; and

a control switch means capable, upon activation, of effectively electrically connecting said first transfer control field-effect device gate region to a selected one of (i) said first substrate, and (ii) said first unidirectional current conducting means first terminating region, whereby electrical power can be selectively transferred from said alternating polarity electrical power supply means to said load means in correspondence with said selection of electrical connection for said first transfer control field-effect device gate region.

24. The apparatus of claim 23 wherein said switch control means comprises first and second signal controlled field-effect transistors, each of said first and second signal controlled field-effect transistors having first and second terminating regions separated by channel regions and each having a gate region, said first signal controlled field-effect transistor second terminating region being electrically connected to both said second signal controlled field-effect transistor first terminating region and to said first transfer control field-effect device gate region, said first signal controlled field-effect transistor first terminating region being electrically connected to said first substrate and said second signal controlled field-effect transistor second terminating region being electrically connected to said first unidirectional current means first terminating region.

25. The apparatus of claim 23 wherein said energy storage means is a capacitance means.

26. The apparatus of claim 23 wherein said energy storage means is a means through which at least some electrical power can be supplied to said switching circuit from an electrical power source other than said alternating polarity electrical power supply means upon electrical energization of said energy storage means by said other source.

27. The apparatus of claim 23 wherein said circuit further comprises:

said first transfer control field-effect device being effectively an enhancement mode, n-channel, metal-oxide-semiconductor field-effect transistor (MOSFET), with said first transfer control field-effect device first and second terminating regions being source and drain regions therein, and with said first transfer control field-effect device gate region being separated from said first selected region of said first substrate by an insulating layer; and

said first unidirectional current conducting means being a first diode having an anode and a cathode, with first diode anode serving as said first unidirectional current conducting means second terminating region, and with said first diode cathode serving as said first unidirectional current conducting means first terminating region.

28. The apparatus of claim 23 wherein said circuit further comprises said first transfer control field-effect device being effectively a depletion mode, n-channel, field-effect transistor with said first transfer control field-effect device first and second terminating regions being source and drain regions therein.

29. The apparatus of claim 23 wherein said circuit further comprises:

said first transfer control field-effect device being effectively an enhancement mode, p-channel, metal-oxide-semiconductor field-effect transistor (MOSFET), with said first transfer control field-effect device first and second terminating regions being source and drain regions therein, and with said first transfer control field-effect device gate region being separated from said first selected region of said first substrate by an insulating layer; and

said first unidirectional current conducting means being a first diode having an anode and a cathode, with said first diode anode serving as said first unidirectional current conducting means first terminating region, and with said first diode cathode serving as said first unidirectional current conducting means second terminating region.

30. The apparatus of claim 23 wherein said circuit further comprises said first transfer control field-effect device being effectively a depletion mode, p-channel, field-effect transistor with said first transfer controlled field-effect device first and second terminating regions being source and drain regions therein.

31. The apparatus of claim 27 wherein said switch control means comprises first and second signal controlled field-effect transistors, each of said first and second signal controlled field-effect transistors having first and second terminating regions separated by channel regions and each having a gate region, said first signal controlled field-effect transistor second terminating region being electrically connected to both said second signal controlled field-effect transistor first terminating region and to said first transfer control field-effect device gate region, said first signal controlled field-effect transistor first terminating region being electrically connected to said first substrate and said second signal controlled field-effect transistor second terminating region being electrically connected to said first unidirectional current means first terminating region.

32. The apparatus of claim 27 wherein said energy storage means is a capacitance means.

33. The apparatus of claim 28 wherein said energy storage means is a means through which at least some electrical power can be supplied to said switching circuit from an electrical power source other than said alternating polarity electrical power supply means upon electrical energization of said energy storage means by said other source.

34. The apparatus of claim 29 wherein said switch control means comprises first and second signal controlled field-effect transistors, each of said first and second signal controlled field-effect transistors having first and second terminating regions separated by channel regions and each having a gate region, said first signal controlled field-effect transistor second terminating region being electrically connected to both said second signal controlled field-effect transistor first terminating region and to said first transfer control field-effect device gate region, said first signal controlled field-effect transistor first terminating region being electrically connected to said first substrate and said second signal controlled field-effect transistor second terminating region being electrically connected to said first unidirectional current means first terminating region.

35. The apparatus of claim 29 wherein said energy storage means is a capacitance means.

36. The apparatus of claim 30 wherein said energy storage means is a means through which at least some electrical power can be supplied to said switching circuit from an electrical power source other than said alternating polarity electrical power supply means upon electrical energization of said energy storage means by said other source.

37. The apparatus of claim 31 wherein said first and second signal controlled field-effect transistors are each provided in and on said first substrate.

38. The apparatus of claim 34 wherein said first and second signal controlled field-effect transistors are each provided in and on said first substrate.

39. An electronic switching circuit for controlling transfer of electrical power from an alternating polarity electrical power supply means to a load means, said switching circuit comprising:

a first transfer control field-effect device provided in and on a first substrate, said first transfer control field-effect device comprising;

a first transfer control field-effect device channel region located at least in part in a first selected region of said first substrate;

first transfer control field-effect device first and second terminating regions, separated by said first transfer control field-effect device channel region, into which and out of which primary currents through said first transfer control field-effect device can, at least in part, pass upon electrical energization of said first transfer control field-effect device first and second terminating regions, said first transfer control field-effect device first terminating region being electrically connected to a first terminal means adapted for electrical connection to one of said alternating polarity electrical power supply means and said load means, and said first transfer control field-effect device second terminating region being electrically connected to a second terminal means adapted for electrical connection to that one of said alternating polarity electrical power supply means and said load means opposite that to which said first terminal means is adapted for connection to as aforesaid; and

a first transfer control field-effect device gate region capable of affecting, upon electrical energization thereof, any current flow occurring through said first transfer control field-effect device channel region as a result of electrical energization of said first transfer control field-effect device first and second terminating regions;

a first signal controlled field-effect device provided in and on a second substrate, said first signal controlled field-effect device comprising;

a first signal controlled field-effect device channel region located at least in part in a first selected region of said second substrate, said second substrate being electrically connected to said first substrate;

first signal controlled field-effect device first and second terminating regions, separated by said first signal controlled field-effect device channel region, into which and out of which primary currents through said first signal controlled field-effect device can, at least in part, pass upon electrical energization of said first signal controlled field-effect device first and second terminating regions, said first signal controlled field-effect device first terminating region being electrically connected to said first transfer control field-effect device gate region; and

a first signal controlled field-effect device gate region capable of affecting, upon electrical energization thereof, any current flow occurring through said first signal controlled field-effect device channel region as a result of electrical energization of said first signal controlled field-effect device first and second terminating regions, said first signal controlled field-effect device gate region being electrically connected to a third terminal means adapted for electrical connection to both said alternating polarity electrical supply means and said load means; and

a bias control means having a first location therein and a second location therein, said bias control means being capable of selectively providing a bias voltage between said first and second locations therein upon electrical energization of said bias control means, said bias control means first location being electrically connected to said first signal controlled field-effect transistor second terminating region and said bias control means second location being electrically connected to said first transfer control field-effect device, whereby electrical power can be selectively transferred from said alternating polarity electrical power supply means to said load means in correspondence with said selective providing of said bias voltage between said bias control means first and second locations.

40. The apparatus of claim 39 wherein at least a part of said load means is electrically connected to a fourth terminal means adapted for connection to said alternating polarity electrical power supply means, and wherein one of said first and second terminal means is electrically connected to said first portion of said load means and said third terminal means includes said fourth terminal means.

41. The apparatus of claim 39 wherein said circuit further comprises said first transfer control field-effect device being effectively an enhancement mode, n-channel, metal-oxide-semiconductor field-effect transistor (MOSFET), with said first transfer control field-effect device first and second terminating regions being source and drain regions therein, and with said first transfer control field-effect device gate region being separated from said first selected region of said first substrate by an insulating layer.

42. The apparatus of claim 39 wherein said circuit further comprises said first transfer control field-effect device being effectively a depletion mode, n-channel, field-effect transistor, with said first transfer control field-effect device first and second terminating regions being source and drain regions therein.

43. The apparatus of claim 39 wherein said circuit further comprises said first transfer control field-effect device being effectively an enhancement mode, p-channel, metal-oxide-semiconductor field-effect transistor (MOSFET), with said first transfer control field-effect device first and second terminating regions being source and drain regions therein, and with said first transfer control field-effect device gate region being separated from said first selected region of said first substrate by an insulating layer.

44. The apparatus of claim 39 wherein said circuit further comprises said first transfer control field-effect device being effectively a depeletion mode, p-channel, field-effect transistor, with said first transfer control field-effect device first and second terminating regions being source and drain regions therein.

45. The apparatus of claim 39 wherein said bias control means second location is electrically connected to one of said first transfer control field-effect device first and second terminating regions.

46. The apparatus of claim 39 wherein said bias control means second location is electrically connected to said first substrate.

47. The apparatus of claim 39 wherein said first and second substrates are a common substrate.

48. The apparatus of claim 43 wherein said bias control means second location is electrically connected to one of said first transfer control field-effect device first and second terminating regions and wherein said first and second substrates are a common substrate.

49. An electronic switching circuit for controlling transfer of electrical power from alternating polarity electrical power supply means to a load means, said switching circuit comprising:

a set of transfer control field-effect devices each provided in and on one of a corresponding set of substrates from among which a k^th said field-effect device is provided in and on a corresponding k^th said substrate where 1≦

k≦

n and n≧

2, a k^th one of said set of transfer control field-effect devices comprising;

a k^th transfer control field-effect device channel region located, at least in part, in a first selected region of said corresponding k^th substrate;

k^th transfer control field-effect device first and second terminating regions, separated by said k^th transfer control field-effect device channel region, into which and out of which primary currents through said k^th transfer control field-effect device can, at least in part, pass upon electrical energization of said k^th transfer control field-effect device first and second terminating regions, said k^th field-effect device second terminating region being electrically connected to a (k+l)^th said field-effect device first terminating region except for a first (k=1) said field-effect device first terminating region being electrically connected to a first terminal means adapted for electrical connection to a first circuit portion arrangement which includes both said alternating polarity electrical power supply means and said load means, and except for a last (k=n) said field-effect device second terminating region being electrically connected to a second terminal means adapted for electrical connection to said first circuit portion arrangement; and

a k^th transfer control field-effect device gate region capable of affecting, upon electrical energization thereof, any current flow occurring through said k^th transfer control field-effect device channel region as a result of electrical energization of said k^th transfer control field-effect device first and second terminating regions;

a set of n conductive connector means each of which is such that a k^th one of said set of connector means is correspondingly electrically connected between a k^th said transfer control field-effect device substrate and a k^th said transfer control field-effect device gate region;

a bias control means having a first location therein and a second location therein, said bias control means being capable of selectively providing a bias voltage between said first and second locations therein upon electrical energization of said bias control means, said bias control means second location being electrically connected to one of said first (k=1) to last (k-n) transfer control field-effect devices; and

a set of n isolation means each of which is provided such that a k^th one of said set of isolation means is correspondingly electrically connected between said bias control means first location and a k^th said transfer control field-effect device gate region, each said isolation means being capable, if placed in series with its corresponding connection means and electrically energized jointly therewith, of preventing a significant voltage drop from occurring across said corresponding connection means, whereby electrical power can be selectively transferred from said alternating polarity electrical power supply means to said load means in correspondence with said selected providing of said bias voltage between said bias control means first and second locations.

50. The apparatus of claim 49 wherein at least a part of said load means is electrically connected to a third terminal means adapted for connected to said alternating polarity electrical power supply means, and wherein said bias control means further comprises:

an energy storage means having first and second polarity regions between which said energy storage means is capable of providing electrical energy storage, said energy storage means first polarity region being electrically connected to said bias control means second location;

a first unidirectional current conducting means having therein first and second terminating regions between which an asymmetrical current conducting capability is exhibited, said first unidirectional current conducting means first terminating region being electrically connected to a selected one of said first and second terminal means, said first unidirectional current conducting means second terminating region being electrically connected to said energy storage means first polarity region;

a second unidirectional current conducting means having therein first and second terminating regions between which an asymmetrical current conducting capability is exhibited, said second unidirectional current conducting means first terminating region being electrically connected to said energy storage means second polarity region, said second unidirectional current conducting means second terminating region being electrically connected to said third terminal means; and

a switch means capable, upon activation, of electrically connecting said bias control means first location to a selected one of said energy storage means first and second polarity regions.

51. The apparatus of claim 49 wherein said bias control means second location being electrically connected to said first transfer control field-effect device first terminating region.

52. The apparatus of claim 49 wherein said bias control means second location being electrically connected to said first transfer control field-effect device substrate.

53. The apparatus of claim 49 wherein said bias control means second location being electrically connected to said last transfer control field-effect device second terminating region.

54. The apparatus of claim 49 wherein said bias control means second location being electrically connected to said last transfer control field-effect device substrate.

55. The apparatus of claim 49 wherein said circuit further comprises:

each of said set of transfer control field-effect devices being effectively an enhancement mode, n-channel, metal-oxide-semiconductor field-effect transistor (MOSFET) with its first and second terminating regions being source and drain regions therein, and with its gate region being separated from its corresponding said selected region of its said corresponding substrate by an insulating layer; and

said set of isolation means each being a diode having an anode and a cathode with each anode thereof being electrically connected to said bias control means first location.

56. The apparatus of claim 49 wherein said circuit further comprises said set of transfer control field-effect devices each being effectively a depletion mode, pn-channel field-effect transistor with its first and second terminating regions being source and drain regions therein.

57. The apparatus of claim 49 wherein said circuit further comprises:

each of said set of transfer control field-effect devices being effectively an enhancement mode, p-channel, metal-oxide-semiconductor field-effect transistor (MOSFET) with its first and second terminating regions being source and drain regions therein, and with gate region being separated from its corresponding said selected region of its said corresponding substrate by an insulating layer; and

said set of isolation means each being a diode having an anode and a cathode with each cathode thereof being electrically connected to said bias control means first location.

58. The apparatus of claim 49 wherein said circuit further comprises said set of transfer control field-effect devices each being effectively a depletion mode, p-channel, field-effect transistor, with its first and second terminating regions being source and drain regions therein.