High-voltage circuit for insulated gate field-effect transistor

  • US 4,317,055 A
  • Filed: 05/08/1979
  • Issued: 02/23/1982
  • Est. Priority Date: 05/24/1978
  • Status: Expired due to Term
First Claim
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1. A high-voltage MOSFET (insulated gate field-effect transistor) circuit wherein n MOSFETs are connected in series by electrically connecting a drain of the m-th (1≦

  • m≦

    n-1) MOSFET and a source of the (m+1)-th MOSFET, a source and gate of the first MOSFET being respectively used as a source terminal and gate terminal of the MOSFET circuit, a drain of the n-th MOSFET being used as a drain terminal of the MOSFET circuit, and wherein divided voltages obtained by dividing a voltage applied across the source and drain terminals, by means of a first voltage divider circuit in which a plurality of resistors are connected in series are applied to gates of the second to n-th MOSFETs;

    the high-voltage MOSFET circuit being characterized by comprising means for holding the second to n-th MOSFETs in an "on" state by applying bias voltages from a bias voltage supply to the respective gates of said second to n-th MOSFETs.

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