Silicon pressure sensor

• US 4,317,126 A
• Filed: 04/14/1980
• Issued: 02/23/1982
• Est. Priority Date: 04/14/1980
• Status: Expired due to Term

• Current Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Gragg, John E. Jr.
• Primary Examiner(s): Edlow, Martin H.
• Application Number:
  US06/140,289
• Time in Patent Office: 680 Days
• Field of Search: 357/26, 357/60, 357/55, 338/4
• US Class Current: 257/419
• CPC Class Codes: G01L 9/0054 integral with a semiconducting diaphragm
• CPC Class Codes: H01L 29/84 controllable by variation of applied mechanical force, e.g. of pressure

Abstract

A monolithic silicon pressure sensor employing a four-terminal resistive element is formed in a thin monocrystalline silicon diaphragm. The resistive element is a diffused resistor having current contacts at the ends and two voltage contacts located midway between the current contacts and on opposite sides of a current axis defined between the two current contacts. The thin silicon diaphraghm has a square shape and is oriented in a (100) silicon surface with its sides parallel to a [110] crystal orientation. The resistor is oriented with its current axis parallel to a [100] crystalline direction and at 45 degrees with respect to the edge of the diaphragm to maximize sensitivity of the resistor to shear stresses generated by flexure of the diaphragm resulting from pressure differentials across the diaphragm. With a current flowing between current contacts, a shear stress acting on the resistor generates a voltage which appears at the voltage contacts and which is proportional to the magnitude of the shear stress.

Claims

1. A silicon pressure transducer comprising:

a silicon diaphragm of first conductivity type capable of flexing in response to changes in pressure;

a diffused region in said diaphragm of opposite conductivity type;

first and second electrical terminals to said diffused region by which a current can be forced through said region in the plane of said diaphragm;

third and fourth electrical terminals to said diffused region located on opposite sides of and along a line approximately perpendicular to a line between said first and second terminals, said third and fourth electrical terminals permitting the detection and measurement of a voltage generated in response to a pressure being applied to and causing flexure of said diaphragm.

2. The transducer of claim 1 wherein said diaphragm is rectangular in shape.

3. The transducer of claim 1 wherein said diaphragm is approximately square in shape.

4. The transducer of claim 3 wherein said diaphragm is bounded at the edges of the square.

5. The transducer of claim 3 wherein said diaphragm is oriented in a (100) silicon plane.

6. The transducer of claim 5 wherein said diaphragm has an edge oriented in a [100] direction.

7. The transducer of claim 6 wherein said diffused region is cross shaped, having first and second portions oriented approximately perpendicular to each other.

8. The transducer of claim 7 wherein said first and second electrical terminals contact said first portion and said third and fourth terminals contact said second portion.

9. The transducer of claim 7 wherein said first portion is oriented at approximately 45°

to an edge of said diaphragm.

10. The transducer of claim 3 wherein said region is located proximate to an edge of said diaphragm.

11. The transducer of claim 1 wherein said diaphragm is n-type and said diffused region is p-type.

12. A silicon pressure sensor comprising:

a monocrystalline silicon diaphragm of first conductivity type having a square shape, said diaphragm having a (100) surface orientation and having sides oriented in [110] crystalline directions;

a resistor of opposite conductivity type diffused into said diaphragm having current contact areas at the ends thereof, a line between said current contact areas forming a current axis, and first and second voltage contact areas positioned at opposite sides of said resistor.

13. The pressure sensor of claim 12 wherein said resistor is positioned in said diaphragm with said current axis oriented in a [100] crystalline direction at approximately 45°

with respect to one of said sides.

14. The pressure sensor of claim 12 wherein said diaphragm is n-type and said resistor is p-type.

15. The pressure sensor of claim 12 wherein said diaphragm is formed by etching a cavity in a silicon wafer to leave said diaphragm unetched.

16. The pressure sensor of claim 15 wherein said silicon wafer in which a cavity is etched is sealed to a second silicon wafer.

17. The pressure sensor of claim 16 wherein said second silicon wafer is provided with a hole therein aligned with said cavity in said first wafer.