Process for the production of ultrahigh purity silane with recycle from separation columns

• US 4,340,574 A
• Filed: 08/28/1980
• Issued: 07/20/1982
• Est. Priority Date: 08/28/1980
• Status: Expired due to Term

• Current Assignee: Advanced Silicon Materials, Inc.
• Original Assignee: Union Carbide Corporation (Dow, Inc.)
• Inventors: Coleman, Larry M.
• Primary Examiner(s): Cooper, Jack
• Application Number:
  US06/182,148
• Time in Patent Office: 691 Days
• Field of Search: 423/341, 423/342, 423/347, 423/349, 203/4, 203/71, 203/DIG. 6
• US Class Current: 423/347
• CPC Class Codes: C01B 33/029 by decomposition of monosilane
• CPC Class Codes: C01B 33/043 Monosilane
• CPC Class Codes: Y10S 203/06 Reactor-distillation

Abstract

Tri- and dichlorosilanes formed by hydrogenation in the course of the reaction of metallurgical silicon, hydrogen and recycle silicon tetrachloride are employed as feed into a separation column arrangement of sequential separation columns and redistribution reactors which processes the feed into ultrahigh purity silane and recycle silicon tetrachloride. A slip stream is removed from the bottom of two sequential columns and added to the recycle silicon tetrachloride process stream causing impurities in the slip streams to be subjected to reactions in the hydrogenation step whereby waste materials can be formed and readily separated.

Claims

1. In the process for the production of silane from metallurgical grade silicon which process includes the steps of (i) reacting metallurgical grade silicon with hydrogen and silicon tetrachloride at elevated temperature and pressure in a hyddrogenation reaction zone to form trichlorosilane and dichlorosilane;

(ii) separating tri- and dichlorosilane as an overhead stream and unreacted silicon tetrachloride as a bottom stream in a first distillation zone;

(iii) separating said overhead stream of tri- and dichlorosilane in a second distillation zone to form a dichlorosilane-rich overhead stream and a trichlorosilane-rich bottom stream;

(iv) recycling said unreacted silicon tetrachloride bottom stream to said hydrogenation reaction zone;

(v) subjecting said dichlorosilane-rich overhead of (iii) to temperature and pressure conditions capable of causing the disproportionation thereof in a first disproportionation reaction zone containing an ion exchange resin capable of catalyzing said disproportionation reaction, thereby forming a mixture of silane and chlorosilanes;

(vi) subjecting said trichlorosilane-rich bottom stream of (iii) to temperature and pressure conditions capable of causing the disproportionation thereof in a second disproportionation reaction zone containing an ion exchange resin capable of catalyzing said disproportionation reaction, thereby forming a mixture of chlorosilanes and silicon tetrachloride;

(vii) recycling said mixtures of chlorosilanes and silicon tetrachloride of (vi) to said first distillation zone;

(viii) separating said mixture of silane and chlorosilanes of (v) in a third distillation zone to form a product silane overhead stream and a chlorosilane-rich bottom stream;

(ix) recycling said chlorosilane-rich bottom stream from said third distillation zone to said second distillation zone; and

(x) recovering silane product from said third distillation zone, the improvement which comprises bleeding a portion of the trichlorosilane-rich bottom stream of (iii) said bleed portion containing one or more of BCl₃, PCl₃ and AsCl₃ impurities and adding said portion to the unreacted silicon tetrachloride bottom recycle stream of (iv) and bleeding a portion of the chlorosilane-rich bottom stream of (viii) said bleed portion containing one or more of B₂ H₆, PH₃ and AsH₃ impurities and adding said portion to the unreacted silicon tetrachloride bottom recycle stream of (iv), wherein the respective bleed portions of the trichlorosilane-rich bottom stream of (iii) and chlorosilane-rich bottom stream of (Viii) are 0.01 to 0.1 percent of their respective bottom streams.

2. The process of claim 1 in which said ion exchange resin comprises a resin containing tertiary amino or quanternary ammonium groups bonded to carbon.

3. The process of claim 1 in which first distillation column is operated at a pressure of from about 30 to about 70 psia, said second column is operated at from about 150 to about 350 psia and said third column is operated at from about 300 to about 400 psia.

4. The process of claim 3 in which said second column is operated at about 310 psia.

5. The process of claim 3 in which said third column is operated at about 350 psia.

6. The process of claim 3 in which said first column is operated at about 50 psia.

7. The process of claim 2 in which said ion exchange resin is macroreticular and contains tertiary amino groups.