Method for fabricating a semiconductor device
First Claim
1. A method for depositing a film onto a substrate utilizing evaporation comprising the steps offorming an atmosphere containing an atomic state gas selected from a group consisting of hydrogen, oxygen and nitrogen with a partial pressure of 1×
- 10-3 Torr or less, in a vacuum container, anddepositing a film consisting of a compound presenting semiconductor characteristics or a solid solution thereof on a substrate in said atmosphere to form a film on said substrate.
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Accused Products
Abstract
In a vacuum container an active (or atomic state) gas consisting of either one of active hydrogen, active oxygen and active nitrogen with a partial pressure of 1×10-3 Torr or less is produced. In an atmosphere of the active (or atomic state) gas, a film, which consists of a compound presenting semiconductor characteristics (CdS, CdSe, ZnSe, ZnS, ZnTe, CdTe) or a solid solution thereof and presents a desired polarity property such as p, n, p+ or n+, is vapor-deposited on a substrate at a desired position with a desired thickness, so as to fabricate an evaporation device which is preferable, for example, as a photoconductive target for a television camera tube.
16 Citations
16 Claims
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1. A method for depositing a film onto a substrate utilizing evaporation comprising the steps of
forming an atmosphere containing an atomic state gas selected from a group consisting of hydrogen, oxygen and nitrogen with a partial pressure of 1× - 10-3 Torr or less, in a vacuum container, and
depositing a film consisting of a compound presenting semiconductor characteristics or a solid solution thereof on a substrate in said atmosphere to form a film on said substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
- 10-3 Torr or less, in a vacuum container, and
Specification