Biasing methods and circuits for series connected transistor switches

• US 4,367,421 A
• Filed: 04/21/1980
• Issued: 01/04/1983
• Est. Priority Date: 04/21/1980
• Status: Expired due to Term

• Current Assignee: Reliance Electric Company (ABB Limited)
• Original Assignee: Reliance Electric Company (ABB Limited)
• Inventors: Baker, Richard H.
• Primary Examiner(s): Dixon, Harold A.
• Application Number:
  US06/142,168
• Time in Patent Office: 988 Days
• Field of Search: 307/570, 307/571, 307/254
• US Class Current: 327/432
• CPC Class Codes: H03K 17/102 in field-effect transistor switches
• CPC Class Codes: H03K 17/567 Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Abstract

In one embodiment of the invention, a switching circuit is provided by connecting the main current paths of a plurality of relatively low voltage transistors in series for switching a relatively high level of voltage, with zener diodes being connected across the main current paths of each one of the transistors, the zeners having a breakdown voltage rating no greater than the inverse voltage rating of their respective transistor, and polarized for breaking down whenever the inverse voltage rating of the transistor is exceeded, the zener diodes also providing a voltage divider circuit for applying appropriate levels of bias voltage to the common connections between the transistors for ensuring the inverse voltage ratings of the transistors are not exceeded at times that the transistors are all turned off, or non-conductive.

Claims

1. In a switching circuit including first and second output terminals for connecting a load therebetween, said first terminal also receiving an operating voltage of E₁ volts, a bipolar output transistor having a base electrode, and a main current path connected between said second output terminal and a reference voltage terminal receiving a source of reference voltage, a plurality of first through N control transistors (N=2, 3, 4 . . . ), each having a main current path and a control electrode, each having substantially shorter turn-on and turn-off times than said output transistor, their main current paths connected in series between said second output terminal and the base electrode of said output transistor, the first control transistor having one end of its main current path connected to said second terminal, a method for biasing and operating said N control transistors for turning on and off said output transistor, and for permitting the inverse voltage rating of the main current paths of said N control transistors when turned off to be each be substantially less than E₁ volts, comprising the steps of:

dividing down the voltage V₁ at said second terminal into a plurality of bias voltages V.sub.(N-1) ;

applying said bias voltages V.sub.(N-1) to the common connections between the main current paths of said first through N control transistors, respectively, said bias voltages having predetermined levels, respectively, for ensuring that the inverse voltage rating of said first through N control transistors are not exceeded, when these transistors and said bipolar transistor are non-conductive;

and

applying a control signal individually to the control electrodes of said first through N control transistors, for initially turning on said N^th one of these transistors, causing a substantial reduction in the impedance of the main current path of this transistor, thereby permitting base current to flow in said output transistor, which turns on, causing a substantial reduction in the level of impedance of its main current path, in turn causing a substantial reduction in the level of voltage at said second output terminal, and a corresponding reduction in the level of said plurality of bias voltages to levels permitting said first through (N-1)^th control transistors to turn on, when the difference in between said control and bias voltages increases to predetermined differences, thereby completing the turn-on cycle for said output transistor.

2. The method of claim 1 further including for turning off said switching circuit, the step of removing said control signal from said input terminal, causing sequentially said N^th control transistor to turn-off, removing base current from said output transistor substantially concurrent with said first through (N-1)^th control transistors turning off, followed by said bipolar transistor turning off.

3. A switching circuit, comprising:

first and second output terminals for connecting a load therebetween, said first terminal also receiving an operating voltage of E₁ volts;

an input terminal for receiving a control signal;

a reference voltage terminal for receiving a reference potential of E₂ volts;

an output transistor having a main current path connected between said second output and reference voltage terminals, and a control electrode, said output transistor being responsive to said control signal for substantially reducing the impedance of its main current path;

first through N control transistors, where N is an integer number greater than 1 (N=2, 3, 4 . . . N^th), each one of said first through N control transistors having a main current path and a control electrode, one end of the main current path of said first control transistor being connected to said second terminal, the main current paths of said first through N control transistors being connected in series between said second terminal and the control electrode of said output transistor, said first control transistor having one end of its main current path connected to said second output terminal, said control transistors having substantially faster switching speeds than said output transistor;

voltage divider means connected between said second output terminal and said reference voltage terminals, said voltage divider means having a plurality of bias voltage terminals individual connected to the successive common connections between said first through N control transistors, respectively, for applying thereto predetermined bias voltages having levels less than (E₁ -E₂), thereby permitting said first through N control transistors to have inverse voltage ratings substantially less than (E₁ -E₂), the sum of the voltage drops across the main current paths of these transistors when turned off being substantially equal to (E₁ -E₂); and

means connected between said input terminal and said control electrodes of said first through N control transistors, for individually applying said control signal to these control electrodes, said switching circuit being responsive to the application of said control signal to said input terminal, for sequentially first turning on the N^th control transistor, for lowering the impedance of its main current path, thereby allowing current to flow into the control electrode of said output transistor, the latter responding by turning on to substantially lower the impedance of its main current path, causing the voltage at said second output terminal to approach the level of said reference voltage, causing the other ones of said N control transistors to turn on, substantially lowering the impedance of their respective main current paths, for completing the turn-on cycle for said output transistor, said N control transistors when turned on providing a negative feedback for current between the main current path and control electrode of said output transistor, thereby improving the transient power capability of said output transistor, and preventing saturation thereof.

4. The switching circuit of claim 3, wherein said voltage divider means includes a plurality of unidirectional controlled voltage breakdown means connected across the main current paths of each one of said first through N control transistors, respectively, the breakdown voltage of each one of said plurality of voltage breakdown means being no greater than the inverse voltage rating of the control transistor across which they are connected, respectively, said plurality of voltage breakdown means being polarized for reverse breakdown current flow in the same direction as the flow of current through the main current paths of said control transistors when turned on, for protecting said control transistors from excessive inverse voltage.

5. The switching circuit of claim 4, wherein said plurality of unidirectional controlled voltage breakdown means each consist of a zener diode.

6. The switching circuit of claim 3, wherein said voltage diode means consists of a plurality of (N-1) voltage divider means each including first and second resistors connected in series between said second output terminal and said reference voltage terminal, said first resistor having one end connected to said second output terminal, the common connection between said resistors being said bias voltage terminal, the values of said first and second resistors being chosen for producing a predetermined bias voltage, at their common connection, and for having substantially greater impedance than that of said load.

7. The switching circuit of claims 3, 4, 5 or 6, wherein said means for individually applying said control signal to the control electrodes of said first through N control transistors includes:

a plurality of (N-1) unidirectional current means connected between said input terminal and corresponding ones of said control electrodes of said first through N control transistors, said (N-1) unidirectional current means being polarized for preventing current flow from said (N-1) voltage divider means to said input terminal, respectively, said input terminal being directly connected to the control electrode of said Nth control transistor.

8. The switching circuit of claim 7, wherein said plurality of (N-1) unidirectional current means each consist of a diode.

9. The switching circuit of claim 8, further including a plurality of (N-1) input resistors connected individually between the control electrodes and the common connections of the main current paths of said first through N control transistors, respectively.

10. The switching circuit of claim 7, wherein said output transistor consists of a bipolar transistor have a base electrode for said control electrode.

11. The switching circuit of claim 10, further including charge storage means connected between the bias voltage terminal of said (N-1)_th voltage divider means and said reference voltage terminal, for delaying the turn on of said first through (N-1)_th control transistors for a predetermined time from the turnon of said N_th control transistor, whereby when said (N-1)_th control transistor turns on, the impedance of its main current conduction path is substantially reduced, thereby providing a current path for discharging said charge storage means into the base electrode of said bipolar transistor.

12. The switching circuit of claim 11, wherein said charge storage means consists of a capacitor.

14. A switching circuit responsive to a bilevel input signal and powered by a source of voltage having a predetermined level comprising;

a bipolar transistor having a base and an emitter-collector path connected to opposite terminals of the source and to be powered by the voltage source, the bipolar transistor requiring a relatively long time to switch between conducting and cut-off states;

a negative feedback circuit between the base and collector, said negative feedback circuit including plural switching transistors having series connected main current paths between the base and collector;

means for applying a control signal to control electrodes of the switching transistors so that the main current paths of the switching transistors are activated between a conducting, forward biased state and a cut-off, reverse bias state in response to first and second levels of the control signal, the switching transistors switching between the forward and reverse bias states in a time less than the relatively long time, said switching transistors being connected between the base and collector so that the bipolar transistor emitter collector path is respectively activated to conducting, non-saturated and cut-off states in response to all of the switching transistors being forward biased and fewer than all of the switching transistors being forward biased;

each of said switching transistors having an inverse breakdown voltage less than the voltage established by the voltage source across the base and collector while the bipolar transistor is reverse biased to cut-off;

means for limiting the voltage across the main conducting path of each switching transistor to a predetermined level while that switching transistor is reverse biased, the number of switching transistors, the voltage across the base and collector of the reverse biased bipolar transistor and the inverse breakdown voltage of the switching transistors being such that the limited predetermined voltage across the main conducting path of each switching transistor is less than the inverse breakdown voltage thereof.

13. The switching circuit of claim 16, further including a relatively low value resistor connected between the base electrode of said bipolar transistor and said reference terminal, for ensuring rapid turnoff of said bipolar transistor, when in turnoff bias voltage is applied to its base electrode.

15. The circuit of claim 14 wherein the means for applying the control voltage includes means for activating each of the switching transistors to the forward bias state at a different time.

16. The circuit of claim 15 wherein the means for activating each of the switching transistors to the forward bias state at a different time includes timing means for forward biasing the control electrode of each transistor at a different time.

17. The circuit of claim 16 wherein the timing means for each control electrode, except one, includes a separate diode.

18. The circuit of claim 17 wherein the separate diode is in series between the control electrode and a terminal connected to a source of the control signal.

19. The circuit of claim 18 wherein the timing means for each control electrode includes a circuit shunting the control electrode, the diode supplying current from the control signal source to the circuit shunting the electrode and to the control electrode to forward bias the switching transistor.

20. The circuit of claim 19 wherein the circuit shunting the control electrode includes a resistor and capacitor.

21. The circuit of claim 19 wherein the circuit shunting the control electrode includes a Zener diode.

22. The circuit of claim 14, 15, 16, 17, 18, 19, 20, or 21 wherein the voltage limiting means for each switching transistor includes a voltage divider network connected across opposite terminals of the voltage source, each of said voltage divider networks including a separate tap for supplying a predetermined voltage across the main conducting path of the switching transistor associated therewith.

23. The circuit of claim 22 wherein each switching transistor is a field effect transistor having a source drain path forming the main conducting path and a gate electrode forming the control electrode.

24. The circuit of claim 14, 15, 16, 17, 18, 19, 20, or 21 wherein the voltage limiting means for each switching transistor includes a separate normally back biased breakdown device shunting the main conducting path of the switching transistor, the breakdown device having a breakdown voltage less than the inverse breakdown voltage of the switching transistor it shunts, the voltage across the breakdown device being maintained at a predetermined level higher than the voltage across the switching transistor main conducting path while the switching transistor is forward biased.

25. The circuit of claim 24 wherein the breakdown device is a Zener diode.

26. The circuit of claim 24 wherein each switching transistor is a field effect transistor having a source drain path forming the main conducting path and a gate electrode forming the control electrode, and the breakdown device is a Zener diode.

27. The circuit of claim 14, 15, 16, 17, 18, 19, 20 or 21 further including a bias resistor connected between the base and emitter of the bipolar transistor responsive to current flowing to the emitter of at least one of the switching transistors, and a load connected between one terminal of the voltage source and the collector of the bipolar transistor so current from the voltage source flows through the load to the bipolar collector, the main conducting paths of the switching transistor and the bias resistor in response to the switching transistors all being forward biased.

28. A circuit for supplying current to a load connected in series between terminals of a voltage source having a predetermined value and the circuit, the circuit comprising plural switching transistors having series conducting paths between terminals of the voltage source for selectively applying current from the voltage source to the load, means for applying a control signal to control electrodes of the switching transistors so that the main current paths of the switching transistors are activated between a conducting, forward biased state and a cut-off, reverse bias state in response to first and second levels of the control signal, said switching transistors being connected to the voltage source and load so that the load is supplied by the voltage source with first and second current levels in response to all of the switching transistors being forward biased and fewer than all of the switching transistors being forward biased, and the inverse breakdown voltage of the switching transistors being such that the limited predetermined voltage across the main conducting path of each switching transistor is less than the inverse breakdown voltage thereof.

29. The circuit of claim 28 wherein the means for applying the control voltage includes means for activating each of the switching transistors to be forward bias state at a different time.

30. The circuit of claim 29 wherein the means for activating each of the switching transistors to the forward bias state at a different time includes timing means for forward biasing the control electrode of each transistor at a different time.

31. The circuit of claim 30 wherein the timing means for each control electrode, except one, includes a separate diode.

32. The circuit of claim 31 wherein the separate diode is in series between the control electrode and a terminal connected to a source of the control signal.

33. The circuit of claim 32 wherein the timing means for each control electrode includes a circuit shunting the control electrode, the diode supplying current from the control signal source to the circuit shunting the electrode and to the control electrode to forward bias the switching transistor.

34. The circuit of claim 33 wherein the circuit shunting the control electrode includes a resistor and capacitor.

35. The circuit of claim 33 wherein the circuit shunting the control electrode includes a Zener diode.

36. The circuit of claim 28, 29, 30, 31, 32, 33, 34 or 35 wherein the voltage limiting means for each switching transistor includes a voltage divider network connected across opposite terminals of the voltage source, each of said voltage divider networks including a separate tap for supplying a predetermined voltage across the main conducting path of the switching transistor associated therewith.

37. The circuit of claim 28, 29, 30, 31, 32, 33, 34 or 35 wherein the voltage limiting means for each switching transistor includes a separate normally back biased breakdown device shunting the main conducting path of the switching transistor, the breakdown device having a breakdown voltage less than the inverse breakdown voltage of the switching transistor it shunts, the voltage across the breakdown device being maintained at a predetermined level higher than the voltage across the switching transistor main conducting path while the switching transistor is forward biased.