Epitaxial composite and method of making

  • US 4,368,098 A
  • Filed: 04/07/1978
  • Issued: 01/11/1983
  • Est. Priority Date: 10/01/1969
  • Status: Expired due to Term
First Claim
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1. An organo-metallic process for producing an epitaxial film of Group III-V semiconductor disposed on a single crystal substrate, said process employing an open reactor and comprising the steps of:

  • heating said substrate in said open reactor,introducing into said open reactor a fist material containing a hydride or halide-free alkyl compound of at least one Group V constituent of said semiconductor, and, as a second material, at least one halide-free alkyl compound containing at least one of the Group III constituents of said semiconductor,andexhausting said open reactor to pressure not greater than one atmosphere.

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