Coating process using alkoxy substituted silicon-bearing reactant

• US 4,386,117 A
• Filed: 11/20/1981
• Issued: 05/31/1983
• Est. Priority Date: 11/20/1981
• Status: Expired due to Term

• Current Assignee: Roy G. Gordon
• Original Assignee: Roy G. Gordon
• Inventors: Gordon, Roy G.
• Primary Examiner(s): Hoffman, James R.
• Application Number:
  US06/323,249
• Time in Patent Office: 557 Days
• Field of Search: 427/109, 427/160, 427/167, 427/95
• US Class Current: 427/109
• CPC Class Codes: C03C 17/245 by deposition from the vapour phase
• CPC Class Codes: C03C 2217/213 SiO2
• CPC Class Codes: C03C 2217/23 Mixtures
• CPC Class Codes: C03C 2218/152 by cvd
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/402 Silicon dioxide

Abstract

An improved process for chemical vapor deposition of coatings of the type bearing silicon oxide or silicon oxide/tin oxide mixtures. The process involves the use of mono- or di-alkoxy terminated permethylpolysilanes, preferably monomethoxypentamethyldisilane, as a silicon-donating reactant. Also disclosed are novel transparent silicon-bearing coating compositions which can be formed by the improved process to have any desired refractive index value from about 1.44 to about 2.0.

Claims

1. In a process for making a silicon-oxide-bearing, transparent coating by reacting (a) silicon-bearing gas at elevated temperatures with (b) a gaseous oxidizing agent for oxidizing said silicon at the hot surface of an article to be coated, the improvement wherein said silicon-bearing gas comprises at least one silicon-bearing compound of the formula

View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)

2. A process as defined in claim 1 wherein n is 2 to 6.

3. A process as defined in claim 2 wherein R is methyl.

4. A process as defined in claims 1, 2, or 3 wherein the reaction is carried out at temperatures above 570°

C.

5. A process as defined in claims 1, 2 or 3 wherein the reaction is carried out with reaction mixtures having an initial concentration of above 0.4% of said silicon-bearing compound.

6. A process as defined in claims 1, 2 or 3 wherein the reaction is carried out at temperatures above 570°

C. and with reaction mixtures having an initial concentration of above 0.4% of said silicon-bearing compound.

7. A process as defined in claims 1, 2 or 3 wherein n is 2 to 6, wherein the reaction is carried out at a temperature above 570°

C.

8. A process as defined in claims 1, 2 or 3 wherein, additionally, oxidizable tin-bearing gas is admixed with said silicon-bearing gas and wherein tin is co-deposited is said coating with said silicon.

9. A process as defined in claims 1, 2 or 3 wherein, additionally, an oxidizable tin-bearing gas is admixed with said silicon-bearing gas and wherein tin is co-deposited in said coating with said silicon and wherein said coating is carried out at temperatures above 570°

C.

10. A process as defined in claims 1, 2 or 3 wherein said silicon-bearing compound is Me₅ Si₂ OMe.

11. A process as defined in claims 1, 2 or 3 wherein the coating deposition rate is between 60 and 150 angstroms per second.

12. A process as defined in claims 1, 2 or 3 wherein the reaction is carried out at temperatures above 570°

C. or with reaction mixtures having an initial concentration of above 0.4% of said silicon-bearing compound, and wherein the coating deposition rate is between 60 and 150 angstroms per second.

13. In a process for making a silicon-oxide-bearing, transparent coating by reacting (a) silicon-bearing gas at elevated temperatures with (b) a gaseous oxidizing agent for oxidizing said silicon at the hot surface of an article to be coated, the improvement wherein said silicon-bearing gas comprises at least one silicon-bearing compound of the formula

View Dependent Claims (14, 15, 16, 17)

14. A process as defined in claim 13 wherein n is 2 to 6.

15. A process as defined in claim 14 wherein R is methyl and n is 2.

16. A process as defined in claims 13, 14 or 15 wherein the reaction is carried out at temperatures above 570 degrees C.

17. A process as defined in claims 13, 14 or 15 wherein the reaction is carried out with reaction mixtures having an initial concentration of above 0.4% of said silicon-bearing compound.