Process for forming photoresists with strong resistance to reactive ion etching and high sensitivity to mid- and deep UV-light
First Claim
1. In a process for forming a patterned photoresist by pattern-wise exposing a resist material to light and developing with a solvent, the improvement of increasing the resistance of the resist to reactive ion etching by employing as the resist a copolymer of methacrylonitrile and methacrylic acid and by baking the resist in two stages, one before and one after the exposure to light with the first baking being at a temperature and for a time sufficient to increase the photosensitivity of the photoresist, and with the second baking being at a temperature and for a time sufficient to increase the ion etching resistance of the patterned photoresist.
2 Assignments
0 Petitions
Accused Products
Abstract
A photoresist that has strong resistance to reactive ion etching, high photosensitivity to mid- and deep UV-light, and high resolution capability is formed by using as the resist material a copolymer of methacrylonitrile and methacrylic acid, and by baking the resist before the exposure to light for improved photosensitivity, and after exposure to light, development, and prior to treatment with reactive ion etching.
19 Citations
5 Claims
- 1. In a process for forming a patterned photoresist by pattern-wise exposing a resist material to light and developing with a solvent, the improvement of increasing the resistance of the resist to reactive ion etching by employing as the resist a copolymer of methacrylonitrile and methacrylic acid and by baking the resist in two stages, one before and one after the exposure to light with the first baking being at a temperature and for a time sufficient to increase the photosensitivity of the photoresist, and with the second baking being at a temperature and for a time sufficient to increase the ion etching resistance of the patterned photoresist.
Specification
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- Resources
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Current AssigneeLG Semico Company Limited (SK Hynix Inc.)
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Original AssigneeInternational Business Machines Corporation
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InventorsHiraoka, Hiroyuki, Bargon, Joachim, Welsh, Lawrence W. Jr.
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Primary Examiner(s)Louie, Jr., Won H.
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Application NumberUS06/330,103Time in Patent Office554 DaysField of Search430/325, 430/327, 430/328, 430/330, 430/296, 430/910, 430/270, 430/323, 430/326US Class Current430/325CPC Class CodesG03F 7/40 Treatment after imagewise r...
