Bias-voltage generator

• US 4,390,798 A
• Filed: 11/19/1980
• Issued: 06/28/1983
• Est. Priority Date: 11/22/1979
• Status: Expired due to Term

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Kurafuji, Setsuo
• Primary Examiner(s): Anagnos, Larry N.
• Assistant Examiner(s): Davies, B. P.
• Application Number:
  US06/208,384
• Time in Patent Office: 951 Days
• Field of Search: 307/296, 307/297, 307/304, 307/200 B, 331/108 C
• US Class Current: 327/536
• CPC Class Codes: G05F 3/205 Substrate bias-voltage generators for static stores G11C5/146
• CPC Class Codes: H01L 27/0222 Charge pumping, substrate bias generation structures

Abstract

A substrate bias-voltage generator is comprised of an oscillator, and a charge pumping circuit, driven by the oscillator via a coupling capacitor, which transfers accumulated electric charges, out of the semiconductor substrate. The oscillator frequency is varied in accordance with the variation of the voltage level of the semiconductor substrate, preferably by means of an RC circuit, fabricated by a MOSFET variable resistance (R) and a capacitor (C), within a ring oscillator or a multi-vibrator. The gate electrode of the MOSFET variable resistance is directly connected to the semiconductor substrate.

Claims

1. A bias-voltage generator for applying a bias voltage to a semiconductor substrate having an integrated circuit thereon, said generator comprising:

an oscillator producing an oscillating AC signal, said oscillator comprising an RC circuit for varying the frequency of said oscillating AC signal in response to variations of the voltage level of said semiconductor substrate, said RC circuit including a capacitor (C) and a variable resistance (R) comprising a MOSFET having a gate electrode directly connected to the semiconductor substrate such that said variable resistance varies in accordance with the variations of the voltage level of the semiconductor substrate;

a coupling capacitor connected, at one end thereof, to the output of said oscillator; and

a charge pumping circuit for absorbing electric charges accumulated in said semiconductor substrate, connected firstly to the other end of said coupling capacitor, secondly to a ground of said integrated circuit, and thirdly to said semiconductor substrate,

wherein the oscillating frequency of said oscillating AC signal produced by said oscillator varies in proportion to the variation of the voltage level of said semiconductor substrate.

2. A generator as set forth in claim 1, wherein said RC circuit is mounted on the semiconductor substrate together with a desired MOS integrated circuit.

3. A generator as set forth in claim 1,

wherein said oscillator comprises an odd number of inverters,

wherein at least one RC circuit is inserted between at least one pair of said inverters,

and wherein said inverters and at least one said RC circuit are connected in series so as to form a ring oscillator.

4. A generator as set forth in claim 1, wherein said oscillator is formed as a multivibrator, comprised of:

a cross-connected pair of MOSFETS,

a pair of load transistors, each load transistor being operatively connected to a corresponding one of said pair of MOSFETS, and

two of said RC circuits, wherein said cross-connected pair of MOSFETS are interconnected with each other, at respective drains and gate electrodes thereof, via said RC circuits.

5. A generator as set forth in claim 3, wherein each of said inverters comprises both a depletion-type load MOSFET and an enhancement-type MOSFET, and wherein said MOSFET variable resistance of at least one said RC circuit is a depletion-type MOSFET.