Silicon-glass-silicon capacitive pressure transducer

• US 4,405,970 A
• Filed: 10/13/1981
• Issued: 09/20/1983
• Est. Priority Date: 10/13/1981
• Status: Expired due to Term

• Current Assignee: Breed Automotive Technology, Inc. (Ningbo Junsheng Investment Group Co., Ltd.)
• Original Assignee: United Technologies Corporation (Raytheon Technologies Corporation d/b/a RTX)
• Inventors: Grantham, Daniel H., Swindal, James L.
• Primary Examiner(s): Goldberg, Elliot A.
• Application Number:
  US06/310,598
• Time in Patent Office: 707 Days
• Field of Search: 361/283, 73/718, 73/724
• US Class Current: 361/283.1
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm

Abstract

A silicon capacitive pressure transducer 34 comprising two wafers of silicon 14, 32 separated by borosilicate glass 18, 21, one of the wafers 14 having a borosilicate glass pedestal 26 thereon which is metallized 30 to provide one plate of a capacitor, the other plate of which is the surface of one of the silicon wafers 32. The distance between the upper surface of the glass pedestal and the lower surface of the silicon wafer is defined by a portion 18 of the borosilicate glass, the portion 21 of borosilicate glass being the same height as that of the glass pedestal 26. An embodiment of a transducer 34b employs a silicon pedestal 26b, wherein the glass portion 21b only provides separation of the silicon wafers 14b, 32b with lower parasitic capacitance.

Claims

1. A silicon, capacitive pressure transducer comprising:

a first piece of conductive silicon having disposed thereon a pedestal, said pedestal having a conductive surface;

a second piece of conductive silicon having a conductive surface thereon; and

a wall of glass joining said first piece of silicon with said second piece of silicon and providing a chamber between said pieces and said wall, the conductive surface on said pedestal being spaced a short distance from the conductive surface of said second piece of silicon, forming the plates of a capacitor, said distance and therefore the capacitance of said capacitor varying in response to changes in fluidic pressure external to said transducer, the length of said wall between said pieces of silicon being at least four times greater than the distance between said capacitor plates.

2. A transducer according to claim 1 wherein said pedestal is formed by depositing glass on said first silicon piece and providing a conductive layer on the glass at the top surface of said pedestal, said conductive layer being connected through said glass pedestal for electrical connection with said first silicon piece.

3. A transducer according to claim 2 wherein said glass wall structure includes a first portion equal to the distance between the top of the glass pedestal and the opposing surface of said second piece of conductive silicon and a second portion equal in dimension to the height of said pedestal.

4. A transducer according to claim 1 wherein said pedestal is formed within said first silicon piece, the conductive surface on the top of said pedestal comprising the conductive surface of said first piece of conductive silicon;

and wherein said glass wall structure has a dimension separating said two piece of conducting silicon which is equal to the summation of the height of said pedestal and the distance between the surface of said pedestal and the conductive surface of said second piece of conductive silicon.