Far UV patterning of resist materials

• US 4,414,059 A
• Filed: 12/09/1982
• Issued: 11/08/1983
• Est. Priority Date: 12/09/1982
• Status: Expired due to Term

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Brown, Karen H., Srinivasan, Rangaswamy, Blum, Samuel E.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US06/448,126
• Time in Patent Office: 334 Days
• Field of Search: 427/43.1, 427/53.1, 427/54.1, 427/264, 427/272, 148/187, 250/492 R, 219/121 LM, 430/296, 430/313, 430/315, 430/317, 430/318, 430/945, 156/643, 156/654, 156/655, 156/656, 156/657, 156/659.1, 156/904, 156/668
• US Class Current: 216/48
• CPC Class Codes: G03F 7/039 Macromolecular compounds which are photodegradable, e.g. positive electron resists G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023
• CPC Class Codes: G03F 7/2004 characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
• CPC Class Codes: H01L 21/268 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 21/31127 Etching organic layers
• CPC Class Codes: H05K 3/0017 Etching of the substrate by chemical or physical means
• CPC Class Codes: Y10S 430/146 Laser beam
• CPC Class Codes: Y10S 438/94 Laser ablative material removal
• CPC Class Codes: Y10S 438/949 Energy beam treating radiation resist on semiconductor

Abstract

A technique is described for the fabrication of devices and circuits using multiple layers of materials, where patterned layers of resists are required to make the device or circuit. The fabrication process is characterized by the selective removal of portions of the resist layer by ablative photodecomposition. This decomposition is caused by the incidence of ultraviolet radiation of wavelengths less than 220 nm, and power densities sufficient to cause fragmentation of resist polymer chains and the immediate escape of the fragmented portions from the resist layer. Energy fluences in excess of 10 mJ/cm² /pulse are typically required. The deliverance of a large amount of energy in this wavelength range to the resist layer in a sufficiently short amount of time causes ablation of the polymer chain fragments. No subsequent development step is required for patterning the resist layer.

Claims

1. In a thin film fabrication process for producing a device or circuit, the steps as follows:

providing a substrate including at least one layer therein,

depositing a resist layer on said substrate,

removing selected areas of said resist layer by irradiation of said selected areas with ultraviolet light of wavelengths less than 220 nm and having a sufficient power density to produce ablative photodecomposition of said irradiated areas to expose portions of said substrate, and

causing a change to said exposed portions of said substrate through said patterned resist layer.

2. The process of claim 1, in which said ultraviolet radiation is pulse radiation having a fluence greater than 10 mJ/cm² /pulse.

3. The method of claim 2, where said ultraviolet radiation is produced by an ArF laser and the wavelength of said radiation is 193 nm.

4. The process of claim 1, where said resist is either a negative or a positive resist.

5. The process of claim 1, where the final step thereof is the addition of a layer to said exposed portions of said substrate through said patterned resist layer.

6. The process of claim 1, where the final step thereof is the etching of said exposed portions of said substrate through said patterned resist layer.

7. The process of claim 1, where the final step thereof includes the treatment of said exposed portions of said substrate through said patterned resist layer to modify the characteristics of said exposed portions.

8. A method for patterning resist layers of the type used in lithography processes, comprising the steps of:

depositing a layer of said resist on a substrate, and

irradiating selected areas of said resist layer with ultraviolet radiation having wavelengths less than 220 nm and an energy fluence in excess of that required to break polymer chains in said resist layer to produce enough broken fragments of said chains in a given time that said broken fragments will ablate and escape from said resist, leaving etched areas corresponding to the pattern of ultraviolet radiation incident on said resist layer.

9. The method of claim 8, where said resist layer is selected from the group consisting of positive and negative resist materials.

10. The method of claim 8, where said wavelength is 193 nm.

11. The method of claim 8, where the fluence of said radiation is in excess of 10 mJ/cm².

12. The method of claim 8, where said radiation is produced by a laser, and is pulsed radiation.

13. The method of claim 8, where said radiation is pulse radiation, and wherein the incidence of pulses of radiation on said resist layer is repeated for a sufficient amount of time to remove the entire thickness of said resist layer.

14. The method of claim 8, where said resist layer is irradiated in small regions less than 1 micron wide.

15. A method for patterning layers of resist material of the types used in lithographic processes, wherein selected areas of said resist layer are irradiated with ultraviolet radiation having wavelengths less than 220 nm and energy fluences in excess of about 10 mJ/cm² /pulse.

16. The method of claim 15, where said radiation is produced by an ArF laser having an output wavelength of 193 nm.

17. The method of claim 15, where said ultraviolet radiation is pulsed radiation, the incidence of said pulses of radiation on said resist layer continuing until said resist layer is removed through its entire thickness.