Piezoelectric composite thin film resonator

• US 4,456,850 A
• Filed: 02/09/1983
• Issued: 06/26/1984
• Est. Priority Date: 02/09/1982
• Status: Expired due to Term

• Current Assignee: Nippon Electric Company Limited (NEC Corporation)
• Original Assignee: Nippon Electric Company Limited (NEC Corporation)
• Inventors: Inoue, Takeshi, Miyasaka, Yoichi
• Primary Examiner(s): Budd, Mark O.
• Application Number:
  US06/465,316
• Time in Patent Office: 503 Days
• Field of Search: 310/346, 310/338, 310/339, 310/331, 310/332, 310/311, 310/324, 310/328
• US Class Current: 310/324
• CPC Class Codes: H03H 9/02102 of temperature influence cutting angles H03H9/02015
• CPC Class Codes: H03H 9/582 implemented with thin-film techniques
• CPC Class Codes: H03H 9/588 Membranes

Abstract

A piezoelectric composite thin-film resonator has good temperature stability and resonance response, in a fundamental thickness-extensional vibration mode. Spurious vibrations caused by even-number order harmonic overtones are suppressed. The resonator has a thin film of SiO₂ or other materials having a resonant frequency temperature coefficient which is opposite to that of the piezoelectric material. The SiO₂ layer is inserted between two thin films of ZnO, CdS, AlN, or other piezoelectric materials. This sandwiched structure is positioned between a pair of electrode films and is supported by an insulative or a semiconductive film which is in turn fixed to a substrate. The thicknesses of the thin films have values such that an overall temperature coefficient of the resonant frequency may be at or near substantially zero. In order to better remove the even-number order harmonics, it is preferable to cover the upper electrode film with a thin film of semiconductor or insulator material.

Claims

1. A piezoelectric thin film resonator comprising a first thin film formed of a semiconductor or an insulator material, a lower electrode formed on said first thin film, a piezoelectric thin film formed on said lower electrode, a second thin film formed of a material having an opposite resonant frequency temperature coefficient as compared to the corresponding coefficients of said piezoelectric thin film and positioned on said piezoelectric thin film, another piezoelectric thin film formed on said second thin film, and an upper electrode formed on said other piezoelectric thin film, the total thickness of the two piezoelectric thin films and said second thin film being within the range of 50 μ

m to 3 μ

m and the ratio of the thickness of said second thin film to the thickness of said two piezoelectric thin films being in the range of 0.085 to 0.093.

2. The resonator as claimed in claim 1, further comprising a substrate having an aperture, said first thin film being fixed to said substrate and covering said aperture.

3. The resonator as claimed in claim 1, further comprising a third thin film formed of a semiconductor or an insulator material covering said upper electrode.

4. The resonator as claimed in claim 1, wherein the thicknesses of said piezoelectric thin films and the thickness of said second thin film are selected so that a resonant frequency temperature coefficient of said resonator may be nearly zero.

5. The piezoelectric thin film resonator as claimed in claim 1, wherein the material of said piezoelectric thin films is selected from the group consisting of ZnO, CdS and AlN.

6. The piezoelectric thin film resonator as claimed in claim 5, wherein the material of said second thin film is SiO₂.

7. The piezoelectric thin film resonator as claimed in claim 3, wherein the material of said first and third thin films is selected from the group consisting of Si, SiO₂, and Si₃ N₄.

8. The resonator as claimed in claim 1, wherein said piezoelectric thin films are formed of ZnO and said first and second thin films are formed of SiO₂.

9. The resonator as claimed in claim 3, wherein the ratio of the thickness of the one of said first and third thin films to the thickness of one of said piezoelectric thin films is 0.5 or less.

10. A piezoelectric thin film resonator in a fundamental thickness-extensional-vibration mode comprising a first thin film as a substrate, a lower electrode partially formed on said first thin film, a piezoelectric thin film continuously formed on said first thin film and said lower electrode, a second thin film formed of a material having a temperature coefficient of a resonant frequency of the fundamental thickness-extensional-vibration mode which is opposite to the corresponding coefficient of said piezoelectric thin film and covering said piezoelectric thin film, another piezoelectric thin film covering said second thin film, and an upper electrode partially formed on said other piezoelectric thin film, said second thin film being free from any mechanical contact other than with the two piezoelectric thin films, the relative thickness of said second thin film to said two piezoelectric thin films being selected so that spurious vibrations caused by even-number order harmonic overtones may be substantially suppressed with a reduced temperature coefficient at the resonant frequency of the fundamental thickness-extensional-vibration mode of said resonator.

11. The resonator as claimed in claim 10, wherein the total thickness of the two piezoelectric thin films and said second thin film is within the range of 50 μ

m to 3 μ

m and the ratio of one-half of the thickness of said second thin film to the thickness of one of said two piezoelectric thin films is in the range of 0.085 to 0.093.

12. The resonator as claimed in claim 10, further comprising a third thin film formed of a semiconductor or an insulator material covering said upper electrode.

13. The resonator as claimed in claim 11, wherein the ratio of the thickness of said first and third thin films to the thickness of said two piezoelectric thin films is 0.5 or less.

14. The piezoelectric thin film resonator as claimed in claim 11, wherein the material of said first and third thin films is taken from the group consisting of Si, SiO₂, and Si₃ N₄.

15. The resonator as claimed in claim 11, wherein said piezoelectric thin films are formed of ZnO and said first and second thin films are formed of SiO₂.

16. The piezoelectric thin film resonator as claimed in claim 10, wherein the material of said second thin film is SiO₂.

17. The piezoelectric thin film resonator as claimed in claim 10, wherein the material of said piezoelectric thin films is taken from the group consisting of ZnO, CdS and A N.

18. The resonator as claimed in claim 10, further comprising a substrate having an aperture, said first thin film being fixed to said substrate and covering said aperture.

19. The resonator as claimed in claim 18, further comprising a third thin film formed of a semiconductor or an insulator material covering said upper electrode.

20. The piezoelectric thin film resonator as claimed in claim 19, wherein the material of said first and third thin films is taken from the group consisting of Si, SiO₂, and Si₃ N₄.