Semiconductor strain gauge with integral compensation resistors
First Claim
1. A semiconductor transducer having integral compensation resistors, comprising:
- a silicon substrate having a first and second surface;
a silicon dioxide layer disposed on said first surface of said silicon substrate;
at least one chromium nitride temperature compensation resistor formed on said silicon dioxide layer;
a plurality of platinum alloy resistors formed on said silicon dioxide layer;
a plurality of gold conductive lines disposed over said silicon dioxide layer interconnecting said resistors;
whereby the electrical characteristics of said transducer when subjected to temperature variations may be adjusted as desired by varying the resistance of said compensation resistor.
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0 Petitions
Accused Products
Abstract
A transducer operating on the strain gauge principle having integral temperature compensation and calibration resistors is disclosed. In the presently preferred embodiment, a silicon dioxide layer is disposed on a silicon substrate. Platinum alloy strain gauge resistors are disposed on the silicon dioxide layer and form a Wheatstone bridge circuit configuration. Laser trimable chromium nitride, platinum alloy and gold temperature compensation and calibration resistors are formed on the silicon dioxide layer from the same films used to form the strain gauge, adhesion layers, conductors and bonding pads, to permit the transducer to be calibrated such that its electrical characteristics are in conformance to specified tolerances when the transducer is subjected to temperature variations.
56 Citations
10 Claims
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1. A semiconductor transducer having integral compensation resistors, comprising:
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a silicon substrate having a first and second surface; a silicon dioxide layer disposed on said first surface of said silicon substrate; at least one chromium nitride temperature compensation resistor formed on said silicon dioxide layer; a plurality of platinum alloy resistors formed on said silicon dioxide layer; a plurality of gold conductive lines disposed over said silicon dioxide layer interconnecting said resistors; whereby the electrical characteristics of said transducer when subjected to temperature variations may be adjusted as desired by varying the resistance of said compensation resistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification