Electrophotographic amorphous silicon member
First Claim
1. An electrophotographic sensitive member which comprises a substrate, a barrier layer of amorphous silicon having a thickness of about 0.2 to 5 microns and containing about 0.05 to 1 atomic % of oxygen and a photoconductive layer of amorphous silicon formed on said barrier layer and containing about 10-5 to 5×
- 10-2 atomic % of oxygen, about 10 to 40 atomic % of hydrogen and about 10 to 20000 ppm of a Group IIIa impurity of the Periodic Table.
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Abstract
The invention disclosed relates to an electrophotographic sensitive member having a photoconductive layer of amorphous silicon. The photoconductive layer is preferably formed by the glow discharge process and includes about 10-5 to 5×10-2 atomic % of oxygen, about 10 to 40 atomic % of hydrogen and about 10 to 20000 ppm of a Group IIIb impurity of the Periodic Table. A barrier layer of amorphous silicon having a thickness of about 0.2 to 5 microns and containing about 0.05 to 1 atomic % of oxygen may also be formed between a substrate and said photoconductive layer.
15 Citations
6 Claims
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1. An electrophotographic sensitive member which comprises a substrate, a barrier layer of amorphous silicon having a thickness of about 0.2 to 5 microns and containing about 0.05 to 1 atomic % of oxygen and a photoconductive layer of amorphous silicon formed on said barrier layer and containing about 10-5 to 5×
- 10-2 atomic % of oxygen, about 10 to 40 atomic % of hydrogen and about 10 to 20000 ppm of a Group IIIa impurity of the Periodic Table.
- View Dependent Claims (2, 3, 4, 6)
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5. An electrophotographic sensitive member which comprises, a barrier layer of amorphous silicon formed by the glow discharge process and having a thickness of about 0.2 to 5 micron and containing about 0.05 to 0.5 atomic % of oxygen but containing as much as about 1 atomic % when the thickness is about 0.2 to 0.4 micron, and a photoconductive layer of amourphous silicon formed by the glow discharge process and having a thickness of about 5 to 100 microns, said photoconductive layer including about 10-5 to 5×
- 10-2 atomic % of oxygen, about 10 to 40 atomic % of hydrogen and about 10 to 20000 ppm of boron.
Specification