Plasma etching using hydrogen bromide addition

  • US 4,490,209 A
  • Filed: 12/27/1983
  • Issued: 12/25/1984
  • Est. Priority Date: 12/27/1983
  • Status: Expired due to Term
First Claim
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1. The method for selectively etching a layer of a silicon-bearing material in an integrated circuit, comprising the steps of:

  • providing a patterned masking material over said silicon-bearing material to expose only the areas of said silicon-bearing material which are to be etched;

    passing a gaseous mixture over said layer; and

    creating a plasma discharge in said gaseous mixture adjacent to said layer of silicon-bearing material;

    wherein said gaseous mixture comprises hydrogen bromide and a chlorine-bearing species.

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