Method of fabricating an MOS memory array having electrically-programmable and electrically-erasable storage devices incorporated therein

  • US 4,490,900 A
  • Filed: 01/29/1982
  • Issued: 01/01/1985
  • Est. Priority Date: 01/29/1982
  • Status: Expired due to Term
First Claim
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1. A method of constructing a tunnel dielectric for an MOS device such that charge carriers supplied by an active region in the device can be transported through said tunnel dielectric, said method comprising the steps of:

  • forming an oxide layer over the active region to provide said tunnel dielectric; and

    converting at least a portion of said oxide layer to an oxynitride material, said oxynitride material exhibiting a relatively low potential barrier to charge carriers tunnelling therethrough.

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