Apparatus and method for measuring the concentration of components in fluids

• US 4,514,263 A
• Filed: 10/21/1983
• Issued: 04/30/1985
• Est. Priority Date: 01/12/1982
• Status: Expired due to Term

• Current Assignee: University of Utah (State of Utah)
• Original Assignee: University of Utah (State of Utah)
• Inventors: Janata, Jiri
• Primary Examiner(s): NOT, DEFINED
• Application Number:
  US06/544,359
• Time in Patent Office: 557 Days
• Field of Search: 357/25, 324/71.5, 204/412, 204/416, 204/431, 204/1 T
• US Class Current: 205/782
• CPC Class Codes: G01N 27/4143 Air gap between gate and channel, i.e. suspended gate [SG] FETs work function measurement per se G01N27/002

Abstract

An apparatus and method for measuring the concentration of various components in a fluid sample. The apparatus comprises a chemically sensitive field effect transistor (CHEMFET) having a semiconductor substrate and a pair of diffusion regions formed at the surface of the substrate. An electrical insulating layer is positioned adjacent the substrate and a fluid pervious bridge member is mounted to the insulating layer so as to form a gap between the bridge member and insulating layer. The apparatus also includes means for imposing an electrical charge on the bridge member, means for imposing an electrical potential between the diffusion regions, and means for detecting current flow between the diffusion regions. The fluid sample to be analyzed is introduced through the fluid pervious bridge member and into the gap where various components of the fluid sample are adsorbed by the bridge member, and in another embodiment, also by an adsorptive layer which is applied within the gap. The adsorptive layer can be specifically chosen so as to render the apparatus chemically selective of one or more fluid components.

Claims

1. An apparatus for detecting a concentration of components in a fluid, comprising:

a semiconductor substrate having a doping polarity;

at least two diffusion regions located at a surface of said substrate;

an electrically insulating layer overlying the surface of said substrate except for that portion of the substrate surface between said diffusion regions;

a bridge member mounted to said insulating layer so as to form a gap between said bridge member and said substrate, said bridge member allowing for passage of fluid into said gap and said bridge member being capable of having an electrical charge imposed upon it, said gap further providing for electrical insulation between said bridge member and the surface of said substrate between said diffusion regions;

means for imposing an electrical charge on said bridge member; and

means for imposing an electrical potential between said diffusion regions.

2. An apparatus as defined in claim 1 wherein said insulating layer comprises silicon dioxide.

3. An apparatus as defined in claim 1 wherein said insulating layer comprises silicon nitride.

4. An apparatus as defined in claim 1 further comprising an adsorptive coating applied to the surface of said substrate between said diffusion regions, said adsorptive coating being capable of selectively adsorbing certain components of the fluid.

5. An apparatus as defined in claim 1 further comprising an adsorptive coating applied to said bridge member, said adsorptive coating being capable of selectively adsorbing certain components of the fluid.

6. An apparatus as defined in claim 1 further comprising an absorptive coating applied to said bridge member, said absorptive coating being capable of conducting an electric current and being capable of selectively absorbing certain components of the fluid.

7. A apparatus as defined in claim 1 wherein a distance between said bridge member and said substrate forming said gap is in the range of between about 0.05 microns and about 10 microns.

8. An apparatus as defined in claim 1 wherein a distance between said bridge member and said substrate forming said gap is in the range of between about 0.1 microns and about 1 micron.

9. An apparatus as defined in claim 1 further comprising means for detecting current flow between said diffusion regions.

10. An apparatus as defined in claim 1 wherein said bridge member is made of a metal selected from the group consisting of gold, platinum, silver, aluminum, and an alloy of any of the foregoing.

11. An apparatus as defined in claim 1 wherein said substrate comprises silicon.

12. An improved field effect transistor of the type having a semiconductor substrate with a doping polarity, at least two diffusion regions located at a surface of said substrate;

an electrically insulating layer overlying the surface of said substrate except for that portion of the substrate surface between said diffusion regions; and

means for imposing an electrical potential between said diffusion regions, wherein the improvement comprises;

a bridge member mounted to the insulating layer so as to form a gap between said bridge member and said substrate, said bridge member allowing for passage of fluid therethrough and being capable of having an electrical charge imposed upon it; and

means for imposing an electrical charge on the bridge member.

13. An improved field effect transistor as defined in claim 12 wherein the improvement further comprises means for detecting current flow between the diffusion regions.

14. An improved field effect transistor as defined in claim 12 wherein the improvement further comprises an adsorptive coating applied to the surface of the substrate between said diffusion regions, said adsorptive coating being capable of selectively adsorbing certain components of the fluid.

15. An improved field effect transistor as defined in claim 12 wherein the improvement further comprises an adsorptive coating applied to the bridge member, said adsorptive coating being capable of selectively adsorbing certain components of the fluid.

16. An improved field effect transistor as defined in claim 12 wherein the improvement further comprises an absorptive coating applied to the bridge member, said absorptive coating being capable of conducting an electric current and being capable of selectively absorbing certain components of the fluid.

17. A method for detecting a concentration of components in a fluid, comprising the steps of:

doping a semiconductor substrate so as to impart a doping polarity to the substrate;

forming at least two diffusion regions at the surface of the substrate;

positioning an electrically insulating layer over the surface of the substrate except for that portion of the substrate surface between the diffusion regions;

mounting a bridge member to the insulating layer so as to form a gap between the bridge member and the substrate, the gap providing for electrical insulation between the bridge member and the surface of the substrate between the diffusion regions;

imposing an electrical charge on the bridge member;

imposing an electrical potential between the diffusion regions;

introducing a fluid through the bridge member and into the gap between the bridge member and the substrate; and

detecting current flow between the diffusion regions.

18. A method as defined in claim 17 further comprising the step of applying an adsorptive coating to the surface of the substrate between the diffusion regions.

19. A method as defined in claim 17 further comprising the step of applying an adsorptive coating to the bridge member.

20. A method as defined in claim 17 further comprising the step of applying an absorptive coating to the bridge member, said absorptive coating being capable of conducting an electric current.