Method for the manufacture of extremely fine structures

  • US 4,529,686 A
  • Filed: 07/18/1983
  • Issued: 07/16/1985
  • Est. Priority Date: 02/03/1981
  • Status: Expired due to Fees
First Claim
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1. Method for the manufacture of extremely fine structures on substrates, which comprises:

  • (a) depositing an insulating layer on a semiconductor substrate;

    (b) depositing a photoresist layer over the entire surface of the insulating layer and subsequently structuring the photoresist layer forming a photoresist mask with first gaps formed therein in which the insulating layer is exposed;

    (c) subsequently directionally depositing etch-resistant material forming an etch-resistant material layer on the photoresist mask and forming another etch-resistant material layer on the insulating layer in a portion of the first gaps simultaneously leaving second smaller gaps free of etch-resistant material in which the insulating layer is exposed in shadow regions of the photoresistant mask;

    (d) etching away the insulating layer in the second gaps which are free of etch-resistant material;

    (e) subsequently nondirectionally depositing contact material over the entire surface of the etch-resistant material layers and on the semiconductor substrate in the second gaps to at least 1.0 μ

    m thickness forming contacts above the photoresist mask and in the first and second gaps; and

    (f) subsequently removing the photoresist mask and the contacts disposed thereon with a lifting technique.

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