Process for forming a T-shaped gate structure

  • US 4,599,790 A
  • Filed: 01/30/1985
  • Issued: 07/15/1986
  • Est. Priority Date: 01/30/1985
  • Status: Expired due to Fees
First Claim
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1. A process for forming a T-shaped gate structure, comprising the steps of:

  • providing a substrate;

    forming a first masking layer on the surface of said substrate;

    forming a second masking layer on the surface of said first masking layer;

    patterning said second masking layer;

    depositing a masking material on the surface of said first and second masking layers from a deposition source at an acute angle relative to the surface of said first and second masking layers thereby depositing a third masking layer on the surface of said first and second masking layers having an opening much smaller than and within the opening provided by said patterned second masking layer;

    etching the portion of said first masking layer exposed by said smaller opening in said third masking layer to said substrate;

    depositing gate material on the surfaces of said substrate and said first, second and third masking layers;

    removing said first, second and third masking layers thereby lifting off a portion of said deposited gate material.

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