Dosimeter

• US 4,678,916 A
• Filed: 02/10/1986
• Issued: 07/07/1987
• Est. Priority Date: 09/18/1985
• Status: Expired due to Term

• Current Assignee: Best Theratronics Incorporated
• Original Assignee: Thomson & Nielsen Electronics Limited
• Inventors: Thomson, Ian
• Primary Examiner(s): FIELDS, CAROLYN
• Application Number:
  US06/827,509
• Time in Patent Office: 512 Days
• Field of Search: 250/370 F, 250/370 K, 250/370 C, 250/370 R, 250/371
• US Class Current: 250/370.07
• CPC Class Codes: G01T 1/026 Semiconductor dose-rate meters
• CPC Class Codes: G01T 1/24 with semiconductor detectors

Abstract

The invention is a radiation dosimeter and method of operation of its elements comprising a pair of silicon insulated gate field effect transistors integrated into the same substrate, each having a gate, a source and a drain. The dosimeter includes apparatus for measuring a first differential threshold votlage between the transistors, appartus for forward biasing the gate of the first transistor and inhibiting operation of the second, while allowing both to be subjected to ionizing radiation, and apparatus for measuring a second differential threshold voltage between the transistors following the irradiation. The first differential threshold voltage can be subtracted from the second to obtain a measure of the radiation dosage. Threshold drift and offset is thereby substantially eliminated.

Claims

1. A radiation dosimeter comprising a pair of silicon insulated gate field effect transistors integrated into the same substrate, each having a gate, a source, and a drain, means for measuring a first differential threshold voltage between the transistors, means for forward biasing the gate of the first transistor and inhibiting operation of the second, while allowing both to be subjected to ionizing radiation, means for measuring a second differential threshold voltage between the transistors following said irradiation, the difference between said differential threshold voltages being indicative of the radiation dosage.

2. A radiation dosimeter comprising first and second insulated gate field effect transistors integrated in the same substrate, each having a source, drain and gate, the sources being connected together, means for connecting a first voltage source positively poled toward the gate of the first transistor between its source and gate, and means connecting a second voltage source positively poled toward the gate of the second transistor between its source and gate, the second voltage source having less potential difference than that of the first voltage source, and means connecting the drains of said transistors together.

3. A dosimeter as defined in claim 2 including means for disconnecting the drains of said transistors from each other, means for disconnecting the voltage sources from the gates, means for connecting the gates to the drains of the corresponding transistors, means for applying similar currents to each source-drain circuit of each transistor, and means for reading potential difference between the drains to obtain either an accumulated radiation dose indication following irradiation or an initial differential threshold measured prior to irradiation.

4. A radiation dosimeter as defined in claim 3 including resistors connected in series with each drain, the values thereof being predetermined to render any differential threshold voltage which may be measured between the two transistors, to zero, prior to irradiation of the transistors.

5. A dosimeter as defined in claim 3 in which the potential difference of the second voltage source is zero.

6. A dosimeter as defined in claim 3 in which the potential difference of the second voltage source is a fraction of the potential difference of the first voltage source.

7. A dosimeter as defined in claim 3 in which the transistors have polysilicon gates separated from the substrate by a gate insulating layer having thickness equal to or greater than about 0.5 micron, and have a common silicon substrate.

8. A dosimeter as defined in claim 3 in which the transistors have polysilicon gates separated from the substrate by a gate insulating layer having thickness equal to or greater than about 0.5 micron, are of P-channel types, and have a common silicon substrate.

9. A dosimeter as defined in claim 2 in which the potential difference of the second voltage source is zero.

10. A dosimeter as defined in claim 2 in which the potential difference of the second voltage source is a fraction of the potential difference of the first voltage source.

11. A dosimeter as defined in claim 2 in which the transistors have polysilicon gates separated from the substrate by a gate insulating layer having thickness equal to or greater than about 0.5 micron, and have a common silicon substrate.

12. A dosimeter as define in claim 2 in which the transistors have polysilicon gates separated from the substrate by a gate insulating layer having thickness equal to or greater than about 0.5 micron, are of P-channel types, and have a common silicon substrate.

13. A radiation dosimeter comprising a first drain to source, cascade interconnection of a first plurality of insulated gate field effect transistors (IGFETs), and a second drain to source cascade interconnection of a second plurality of insulated gate field effect transistors (IGFETs) similar in number to the first, all integrated into the same substrate, means for positive biasing each of the gates of the first plurality of transistors and for biasing each of the gates of the second plurality of transistors to bias levels less than those of the first plurality of transistors, and means connecting drains of transistors at the ends of the respective cascade interconnections together.

14. A radiation dosimeter as defined in claim 13 including means connecting the sources of transistors at the other ends of the respective cascade interconnections together, means for applying a current through the cascade interconnections of the transistors, means for connecting each gate of each transistor to its own drain, and means for measuring a differential threshold of conduction between the cascade connections between corresponding drains in the cascade connections to obtain either a measure of initial threshold differential or received radiation dosage.

15. A radiation dosimeter as defined in claim 14 in which the number of transistors in each cascade interconnection is two.

16. A radiation dosimeter as defined in claim 13 in which the transistors are of P-channel type, the number of transistors in each cascade connection is two, means connecting sources of transistors at the other ends of the cascade interconnections of respective transistors together, means for applying a positive bias to first and second cascaded transistors respectively in the first and second cascaded connections and a smaller positive bias to second and first cascaded transistors respectively in the first and second cascaded connections, during irradiation of all transistors together with ionizing radiation.

17. A method of measuring ionizing radiation dosage comprising:

(a) measuring a first differential threshold voltage between a pair of similar insulated gate field effect transistors integrated into the same substrate,

(b) positively biasing the gate of the first transistor and inhibiting operation of the second, while allowing both to be subjected to ionizing radiation,

(c) measuring a second differential threshold voltage between the transistors following said irradiation, and

(d) subtracting the first from the second differential threshold voltage to obtain a measure of the radiation dosage.

18. A method as defined in claim 17 in which said substrate is silicon and in which each transistor has gate oxide ≧

0.5 micron in thickness.

19. A method as defined in claim 18 in which the gates of the transistors are formed of polysilicon.

20. A method as defined in claim 18 in which the gates of the transistors are formed of polysilicon, the gates have gate oxides of about 0.5 micron thickness and the transistors are of P-channel type integrated in a silicon substrate.

21. A method as defined in claim 17 in which the gates of the transistors are formed of polysilicon.

22. A method as defined in claim 17, in which the gates of the transistors are formed of polysilicon, the gates have gate oxides of about 0.5 micron thickness and the transistors are of P-channel type integrated in a silicon substrate.

23. A method of measuring radiation dosage comprising:

(a) connecting the sources of two insulated gate field effect transistors (IGFETs), integrated in the same substrate, together,

(b) connecting the gate of each transistor to its corresponding drain,

(c) applying equal currents between the drains and sources of each transistor,

(d) measuring a first voltage between the drains of the two transistors,

(e) applying a first biasing voltage between the gate and source and drain of the first transistor, poled to positive bias the gate of the first transistor,

(f) applying a second biasing voltage which is between zero and a level significantly less than the first biasing voltage between the gate and source and drain of the second transistor, poled to zero bias or positive bias the gate of the second transistor,

(g) connecting the drains of the transistors together,

(h) allowing both transistors to be subjected to ionizing radiation,

(i) removing the application of first and second biasing voltage and disconnecting the drains from each other,

(j) repeating steps (b), (c), and (d) but this time in step (d) measuring a second voltage between the drains of the transistor, and

(k) subtracting the initially measured voltage of step (d) from the subsequently measured voltage of step (d) to obtain a measure of the radiation dosage recorded by the first transistor.

24. A method as defined in claim 23 in which the gates of the transistors are formed of polysilicon, the gates have gate oxides of about 0.5 micron thickness and the transistors are of P-channel type integrated in a silicon substrate.