Method of manufacture for semiconductor accelerometer

• US 4,706,374 A
• Filed: 09/27/1985
• Issued: 11/17/1987
• Est. Priority Date: 10/19/1984
• Status: Expired due to Term

• Current Assignee: Nissan Motor Co., Ltd.
• Original Assignee: Nissan Motor Co., Ltd.
• Inventors: Murakami, Koichi
• Primary Examiner(s): Chaudhuri, Olik
• Application Number:
  US06/780,933
• Time in Patent Office: 781 Days
• Field of Search: 29/569 R, 29/576 C, 29/580, 29/591, 148/175, 357/26, 357/55, 156/628, 156/648, 156/649, 156/656, 156/657
• US Class Current: 438/52
• CPC Class Codes: F16C 11/12 incorporating flexible connections, e.g. leaf springs
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/123 by piezo-resistive elements, e.g. semiconductor strain gauges
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 2015/0828 the mass being of the paddle type being suspended at one of its longitudinal ends
• CPC Class Codes: H01L 21/3063 Electrolytic etching

Abstract

An improved method of manufacturing a semiconductor accelerometer having a cantilevered beam is shown. In the fabricating process a semiconductor substrate is divided into p-type regions and n-type regions. The substrate is immersed into an electrochemical solution with a cathode and a suitable voltage is applied. Certain portions of the substate are protected from the etching by the voltage such that the semiconductor substrate is etched to form the cantilevered beam.

Claims

1. A method of manufacture for a semiconductor accelerometer with a cantilevered beam comprising:

a step of providing an upper semiconductor layer of a first conductivity type on a semiconductor substrate of a second conductivity type opposite to the first conductivity type;

a step of providing an electrode in ohmic contact with the upper layer;

a step of forming a patterned region of the second conductivity type encompassing the external shape of a region to be the cantilevered beam in the upper layer;

a step of forming a strain detecting means on the substrate;

a step of providing a mask on the lower surface of the semiconductor substrate;

a step of immersing the substrate with a cathode into etching solution in a condition that a voltage is applied between the electrode and the cathode to carry out an electrochemical etching such that the semiconductor substrate is etched to form the cantilevered beam.

2. A method of claim 1, wherein, said substrate is made of silicon.

3. A method of claim 2, wherein, said upper layer is an epitaxial layer.

4. A method of claim 2, wherein, the etching solution is ethylene diamine.

5. A method of claim 2, wherein, the etching solution is a strong alkali solution.

6. A method of claim 2, wherein, prior to the electrochemical etching an upper weight is formed on the upper surface of the region to be the cantilevered beam.

7. A method for manufacturing a semiconductor accelerometer comprising the steps of:

forming a semiconductor layer of a first conductivity type on the surface of a semiconductor substrate of a second conductivity type;

forming in the semiconductor layer a pattern region of the second conductivity type contacting the semiconductor substrate, said pattern region being patterned so as to define the outlines of a cantilever beam composed of the semiconductor layer and a weight composed of the semiconductor substrate connected to one end of the cantilever beam;

forming a pattern mask on the back surface of the semiconductor substrate;

etching by an alkali etching solution the semiconductor substrate and said pattern region from the back surface of the semiconductor substrate using said pattern mask as an etching mask; and

applying voltage to the semiconductor layer such that the semiconductor layer is not etched with respect to a cathode electrode immersed in the alkali etching solution during said etching, said pattern mask being patterned so as to etch said pattern region, a semiconductor substrate portion below the pattern region and a semiconductor substrate portion below the cantilever beam.

8. A manufacturing method as claimed in claim 7, wherein the semiconductor substrate, the semiconductor layer and the pattern region comprise silicon.

9. A manufacturing method as claimed in claim 7, wherein an additional weight is formed on said cantilever beam before said etching.