Integrated semiconductor light emitting element with oscillation wavelength and phase modulated light output

• US 4,720,835 A
• Filed: 08/19/1985
• Issued: 01/19/1988
• Est. Priority Date: 08/27/1984
• Status: Expired due to Term

• Current Assignee: KDDI Corporation
• Original Assignee: Kokusai Densin Denwa Kabushiki Kaisha
• Inventors: Noda, Yukio, Akiba, Shigeyuki, Utaka, Katsuyuki, Kushiro, Yukitoshi
• Primary Examiner(s): Davie, James W.
• Assistant Examiner(s): Randolph, Bertha
• Application Number:
  US06/767,152
• Time in Patent Office: 883 Days
• Field of Search: 372/50, 372/26, 372/28, 372/96, 357/17
• US Class Current: 372/50.11
• CPC Class Codes: H01S 5/06236 controlling the polarisation, e.g. TM/TE polarisation switching
• CPC Class Codes: H01S 5/06246 controlling the phase
• CPC Class Codes: H01S 5/06258 with DFB-structure
• CPC Class Codes: H01S 5/12 the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers comprising a photonic bandgap structure H01S5/11; surface-emitting lasers H01S5/18
• CPC Class Codes: H01S 5/124 incorporating phase shifts
• CPC Class Codes: H01S 5/164 with window regions comprising semiconductor material with a wider bandgap than the active layer

Abstract

A semiconductor light emitting element is disclosed, which is provided with a light emitting region having a diffraction grating formed by periodic corrugations, a modulation region having an external waveguide layer optically connected directly to the light emitting region and a pn junction separated from a pn junction of the light emitting region and a window region formed of a semiconductor having a larger energy gap than that of a light emitting layer of the light emitting region and extending from at least one end of the light emitting region and the external waveguide layer. The refractive index of the external waveguide is varied through utilization of the electrooptic effect so that the frequency or phase of light stably oscillating at a single wavelength is precisely controlled or modulated. In particular, when the window region is formed only outside the light emitting region, frequency modulation is carried out, and when the window region is formed at least outside the modulation region, phase modulation takes place.

Claims

1. In a semiconductor light emitting element having a light emitting region comprising a DFB laser having a substrate, a light emitting layer, periodic corrugations defining a diffraction grating, an a pn junction therein the improvement comprising an external modulation region on the substrate for modulating the phase or wavelength of the oscillations of the DFB laser light output having an external light waveguide layer of a larger energy band gap than that of the light emitting layer in direct contact with the DFB laser, a clad layer having a larger energy gap than that of the waveguide layer, a pn junction apart from the pn junction in the DFB laser, an electrode for applying a voltage to the pn junction of the modulation region for varying light output, and at least one semiconductor window region on said substrate at one end of the light emitting element for output of light from the element.

2. In a semiconductor light emitting element according to claim 1, in which said semiconductor window region is at the end of the element opposite to the modulation region for output of light of varying modulated wavelength upon application of a reverse bias voltage to the modulation region pn junction.

3. In a semiconductor light emitting element according to claim 2, in which said semiconductor window region comprises a layer having a larger energy gap than that of the waveguide layer.

4. In a semiconductor light emitting element according to claim 1, including a second semiconductor window region on said substrate extending from the modulation region for phase moudlated light output of the element, and the phase of said periodic corrugations being shifted at a position thereon by a value corresponding to a quarter wavelength.

5. A semiconductor light emitting element according to claim 4, in which said semiconductor in said second window region comprises an extension part of said clad layer of the modulation region.

6. In a semiconductor light emitting element according to claim 1, in which said external waveguide layer extends from the diffraction grating corrugations of the DFB laser of the light emitting region.

7. In a semiconductor light emitting element according to claim 6, in which the length of the external waveguide layer determines at least in part the oscillation wavelength.

8. In a semiconductor light emitting element according to claim 1, in which said window region is disposed extending externally on a side opposite from said modulation region, said external waveguide layer extending from the diffraction grating corrugations, and the external waveguide layer length determining oscillation wavelength without varying thereof.

9. In a semiconductor light emitting element having a light emitting region comprising a DFB laser having a substrate, a light emitting layer, periodic corrugations defining a diffraction grating and a pn junction therein, the improvement comprising an external modulation region on the substrate for modulating the oscillation wavelength of the DFB laser light output having a semiconductor external light waveguide layer in direct contact with the DFB laser for passing light from the laser therethrough, means in the modulation region for at times varying the oscillation wavelength of light output of the element, an electrode for applying a voltage to the modulation region for varying light output, and an external semiconductor light window region for output of the light at times modulated as to wavelength.

10. In a semiconductor light emitting element according to claim 9, in which said means in the modulation region for at times varying the oscillation wavelength of the light comprising means defining a pn junction in the modulation region, and means comprising the electrode for reverse biasing the last-mentioned pn junction with a reverse voltage.

11. In a semiconductor light emitting element according to claim 9, in which the external light waveguide layer is in direct contact with the light emitting layer and an end of the periodic corrugations of the DFB laser.

12. In a semiconductor light emitting element having a light emitting region comprising a DFB laser having a substrate, a light emitting layer, periodic corrugations defining a diffraction grating, and a pn junction therein the improvement comprising an external modulation region on the substrate for modulating the phase or wavelength of the oscillations of the DFB laser light output having an external light waveguide layer of a larger energy band gap than that of the light emitting layer in direct contact with the DFB laser, a clad layer having a larger energy gap than that of the waveguide layer, a pn junction apart from the pn junction in the DFB laser, an electrode for applying a voltage to the pn junction of the modulation region for varying light output, and two semiconductor window regions on said substrate at opposite ends of the light emitting element for output of light from the element.