Trench cell for a dram

  • US 4,794,434 A
  • Filed: 07/06/1987
  • Issued: 12/27/1988
  • Est. Priority Date: 07/06/1987
  • Status: Expired due to Term
First Claim
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1. In a semiconductor body including a substrate of a first conductivity and doped to a first concentration, an epitaxial layer grown on the substrate to form a surface of the semiconductor body, and a buried layer of a second conductivity and of a second concentration greater than said first concentration formed below said surface in a region overlapping the substrate and the epitaxial layer, a memory cell comprising:

  • a transistor having a gate and a conduction path; and

    a trench capacitor coupled to one side of the conduction path, said trench capacitor formed of a trench which penetrates the surface and said buried layer, said trench capacitor characterized as having a first plate formed of conductive material inside the trench coupled to the conduction path, and a second plate, said second plate being substantially a portion of the buried layer adjacent to the trench.

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