Electrically programmable memory device employing source side injection

  • US 4,794,565 A
  • Filed: 09/15/1986
  • Issued: 12/27/1988
  • Est. Priority Date: 09/15/1986
  • Status: Expired due to Term
First Claim
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1. A floating gate storage cell providing source-side injection of hot electrons comprising:

  • a body of semi-conductor material having a substrate of a first conductivity type, a source region and a drain region each of a second conductivity type, and a channel region of the first conductivity type extending between the source region and the drain region;

    a control gate overlying said channel region;

    a floating gate insulated from said control gate and said source, drain and channel regions;

    said control gate and said floating gate being mutually aligned with one edge of each of said gates in the immediate vicinity of the drain region;

    a side wall spacer insulated from said source region, said control gate and said floating gate, said spacer being located in the immediate vicinity of the source region and spaced from the opposite edges of each of said gates to provide a gap therebetween; and

    means for providing a weak gate control region near the source region so that a relatively high channel electric field for promoting hot-electron injection is created under the weak gate control region when said device is biased for programming, said means for providing a weak gate control region including a gap between the opposite edges of each said gate and the source region.

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