Gas sensor

• US 4,836,012 A
• Filed: 05/26/1988
• Issued: 06/06/1989
• Est. Priority Date: 05/26/1988
• Status: Expired due to Fees

• Current Assignee: Ametek Incorporated
• Original Assignee: Ametek Incorporated
• Inventors: Doty, Mitchell E., Schmidt, Ferenc J.
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US07/199,123
• Time in Patent Office: 376 Days
• Field of Search: 136/255, 136/291, 357/15, 357/30 C, 73/23, 338/34, 324/71.5
• US Class Current: 73/31.06
• CPC Class Codes: G01N 33/0027 concerning the detector
• CPC Class Codes: Y10S 136/291 Applications

Abstract

A gas sensor comprises a photovoltaic cell which, upon exposure to light, develops a photovoltage or photocurrent which varies as a function of the type of gas sorbed. The cell includes in order a conductor, an N-type light-absorbing semiconductor, and a thin light-transmitting gas-absorbing metal Schottky layer having electrical properties which vary with the type of gas sorbed therein.

Claims

1. A gas sensing device comprising a photovoltaic cell which, upon exposure to light, develops a photovoltage or photocurrent which varies as a function of the type of gas sorbed, included in order:

(i) a conductor,

(ii) an N-type light-absorbing semiconductor,

(iii) a light-transmitting gas-absorbing insulating layer of a dielectric having an electrical property which varies with the type of gas sorbed therein, said dielectric being selected from the group consisting of phthalocyanine and clathrating agents; and

(iv) a light-transmitting gas-penetrable metal Schottky layer.

2. The device of claim 1 wherein said dielectric is phthalocyanine.

3. The device of claim 2 wherein said phthalocyanine is metal-substituted.

4. The device of claim 3 wherein said metal substitution is iron or zinc.

5. The device of claim 1 wherein said metal Schottky layer is non-H₂ -absorbent.

6. The device of claim 5 wherein said metal Schottky layer is gold.

7. The device of claim 1 wherein said electrical property is photo current.

8. The device of claim 1 wherein said N-type light-absorbing semiconductor is CdTe of Si.

9. The device of claim 1 wherein said N-type light absorbing semiconductor is selected from the group consisting of Si, CuInSe₂, CdSe, Cd.sub.(1-x) Hg_x Te, and GaAs.

10. The device of claim 1 wherein said electrical property also varies with the quantity of the gas sorbed up to a saturation point.

11. The device of claim 1 wherein said electrical property is selected from the group consisting of capacitance, resistance and the cell parameters of open circuit voltage and short circuit current.

12. The device of claim 1 wherein said dielectric is a clathrating agent.

13. The device of claim 12 wherein said clathrating agent is thiourea.

14. The device of claim 12 wherein said clathrating agent is a solid and the guest compound is a gas.

15. The device of claim 1 wherein said metal Schottky layer is composed of a metal selected from the group consisting of palladium and nickel.

16. The device of claim 1 wherein said metal Schottky layer is also gas-absorbing and has an electrical property which varies with the type of gas sorbed therein.

17. A gas sensing device comprising a photovoltaic cell which, upon exposure to light, develops a photovoltage or photocurrent which varies as a function of the type of gas sorbed, included in order:

(i) a conductor,

(ii) an N-type light-absorbing semiconductor,

(iii) a light-transmitting gas-absorbing insulating layer of a dielectric having an electrical property which varies with the type of gas sorbed therein, said dielectric being selected from the group consisting of phthalocyanine and clathrating agents; and

(iv) a thin P-type light-transmitting, gas-penetrable semiconductor.

18. The device of claim 17 wherein said dielectric is phthalocyanine.

19. The device of claim 18 wherein said phthalocyanine is metal substituted.

20. The device of claim 19 wherein said metal substitution is iron or zinc.

21. The device of claim 17 wherein said dielectric is a clathrating agent.

22. The device of claim 21 wherein said clathrating agent is thiourea.

23. The device of claim 21 wherein said clathrating agent is a solid and the guest compound is a gas.

24. The device of claim 17 wherein said electrical property is photocurrent.

25. The device of claim 17 wherein said N-type light-absorbing semiconductor is CdTe or Si.

26. The device of claim 17 wherein said N-type light-absorbing semiconductor is selected from the group consisting of Si, CuInSe₂, CdSe, Cd.sub.(1-x) Hg_x Te, and GaAs.

27. The device of claim 17 wherein said electrical property also varies with the quantity of the gas sorbed up to a saturation point.

28. The device of claim 17 wherein said electrical property is selected from the group consisting of capacitance, resistance and the cell parameters of open circuit voltage and short circuit current.

29. The device of claim 17 wherein said P-type semiconductor is also gas-absorbing and has an electrical property which varies with the type of gas sorbed therein.

30. A method of sensing gas comprising the steps of:

(A) providing a photovoltaic cell which, upon exposure to light, develops a photovoltage or photocurrent which varies as a function of the type of gas sorbed, including in order, a conductor, an N-type light-absorbing semiconductor, and a light-transmitting gas-absorbing metal Schottky layer having an electrical property which varies with the type of gas absorbed therein;

(B) exposing the gas-absorbing metal Schottky layer to the gas and the N-type light-absorbing semiconductor to the light; and

(C) correlating the photovoltage or photocurrent as a function of the type of gas sorbed by the metal Schottky layer.

31. The method of claim 30, wherein the metal Schottky layer is composed of a metal selected from the group consisting of palladium and nickel.

32. The method of claim 30 wherein the N-type light-absorbing semiconductor is CdTe or Si.

33. The method of claim 30 wherein the N-type light-absorbing semiconductor is selected from the group consisting of Si, CuInSe₂, CdSe, Cd.sub.(1-x) Hg_x Te, and GaAs.

34. The method of claim 30 wherein the electrical property also varies with the quantity of the gas sorbed up to a saturation point.

35. The method of claim 30 wherein the electrical property is selected from the group consisting of capacitance, resistance and the cell parameters of open circuit voltage and short circuit current.

36. A method of sensing gas comprising the steps of:

(A) providing a photovoltaic cell which, upon exposure to light, develops a photovoltage or photocurrent which varies as a function of the type of gas sorbed, including in order, a conductor, an N-type light-absorbing semiconductor, a light-transmitting gas-absorbing insulating layer of a dielectric having an electrical property which varies with the type of gas sorbed therein, and a light-transmitting gas-penetrable metal Schottky layer;

(B) exposing the metal Schottky layer to the gas and to light; and

(C) correlating the photovoltage or photocurrent as a function of the type of gas sorbed by the dielectric.

37. The method of claim 36 wherein the dielectric is phthalocyanine.

38. The method of claim 37 wherein the phthalocyanine is metal substituted.

39. The method of claim 38 wherein the metal substitution is iron or zinc.

40. The method of claim 36 wherein the dielectric is a clathrating agent.

41. The method of claim 40 wherein the clathrating agent is thiourea.

42. The method of claim 40 wherein the clathrating agent is a solid and the guest compound is a gas.

43. The method of claim 36 wherein the electrical property is photocurrent.

44. The method of claim 36 wherein the N-type light-absorbing semiconductor is CdTe or Si.

45. The method of claim 36 wherein the N-type light-absorbing semiconductor is selected from the group consisting of Si, CuInSe₂, CdSe, Cd.sub.(1-x) Hg_x Te, and GaAs.

46. The method of claim 36 wherein the electrical property also varies with the quantity of the gas sorbed up to a saturation point.

47. The method of claim 36 wherein the electrical property is selected from the group consisting of capacitance, resistance and the cell parameters of open circuit voltage and short circuit current.

48. The method of claim 36 wherein the metal Schottky layer is non-H₂ -absorbent.

49. The method of claim 36 wherein the metal Schottky layer is gold.

50. The method of claim 36, wherein the metal Schottky layer is composed of a metal selected from the group consisting of palladium and nickel.

51. The method of claim 36 wherein the metal Schottky layer is also gas-absorbing and has an electrical property which varies with the type of gas sorbed therein.

52. A method of sensing gas comprising the steps of:

(A) providing a photovoltaic cell which, upon exposure to light, develops a photovoltage or photocurrent which varies as a function of the type of gas sorbed, including in order, a conductor, an N-type light-absorbing semiconductor, a light-transmitting gas-absorbing insulating layer of a dielectric having an electrical property which varies with the type of gas sorbed therein, and a thin P-type light-transmitting gas-penetrable semiconductor;

(B) exposing the semiconductor to the gas and to light; and

(C) correlating the photovoltage or photocurrent as a function of the type of gas sorbed by the semiconductor.

53. The method of claim 52 wherein the dielectric is phthalocyanine.

54. The methodd of claim 53 wherein the phthalocyanine is metal substituted.

55. The method of claim 54 wherein the metal substitution is iron or zinc.

56. The method of claim 52 wherein the dielectric is a clathrating agent.

57. The method of claim 56 wherein the clathrating agent is thiourea.

58. The method of claim 56 wherein the clathrating agent is a solid and the guest compound is a gas.

59. The method of claim 52 wherein the electrical property is photocurrent.

60. The method of claim 52 wherein the N-type light-absorbing semiconductor is CdTe or Si.

61. The method of claim 52 wherein the N-type light-absorbing semiconductor is selected from the group consisting of Si, CuInSe₂, CdSe, Cd.sub.(1-x) Hg_x Te, and GaAs.

62. The method of claim 52 wherein the electrical property also varies with the quantity of the gas sorbed up to a saturation point.

63. The method of claim 52 wherein the electrical property is selected from the group consisting of capacitance, resistance and the cell parameters of open circuit voltage and short circuit current.

64. The method of claim 52 wherein the p-type semiconductor is also gas-absorbing and has an electrical property which varies with the type of gas sorbed therein.