Wave propagation structures for eliminating voltage surges and absorbing transients

• US 4,841,259 A
• Filed: 09/16/1987
• Issued: 06/20/1989
• Est. Priority Date: 09/18/1986
• Status: Expired due to Fees

• Current Assignee: Societe D'Application Des Ferrites Musorb Societe Anonyme
• Original Assignee: Societe D'Application Des Ferrites Musorb Societe Anonyme
• Inventors: Mayer, Ferdy
• Primary Examiner(s): Nussbaum, Marvin L.
• Application Number:
  US07/097,014
• Time in Patent Office: 643 Days
• Field of Search: 333/17 L, 333/81 R, 333/167, 333/174, 333/24.2, 333/12, 333/245-247, 333/181 R, 333/81 A, 333/81 B, 333/250, 333/202, 333/204, 333/205, 333/206, 333/207, 455/217, 357/7, 357/10, 357/12, 361/117-119, 361/126, 361/127
• US Class Current: 333/17.2
• CPC Class Codes: H01B 11/12 Arrangements for exhibiting specific transmission characteristics
• CPC Class Codes: H01B 11/1834 Construction of the insulation between the conductors
• CPC Class Codes: H01C 7/10 voltage responsive, i.e. varistors

Abstract

A four-pole or three-pole structure adapted to propagate an electromagnetic wave, such as an electrical line or cable or electronic component, comprises a lossy non-linear dielectric material distributed in a wave propagation direction. This material has a non-linear conduction characteristic whereby it is substantially non-conductive at any rated applied voltage of the structure and substantially conductive at any abnormally high applied voltage. It consists of a polycrystaline material comprising thin interstitial layers procuring a tunneling or Schottky type effect in response to a high electric field resulting from such abnormally high applied voltages. It absorbs both voltage surges (varistor effect in the time domain) and high-speed transients (lowpass filter effect in the frequency domain). The structure can be used to provide protection against lightning strikes, nuclear electromagnetic pulses, electrostatic discharges and radio-frequency interference in general.

Claims

1. Structure adapted to propagate an electromagnetic wave, comprising:

at least one conductive member, and an adjacent dielectric material distributed in a wave propagation direction, through which said wave passes, said dielectric material exhibiting non-linear conductivity such that it is substantially non-conductive at a rated applied voltage of the structure, and substantially conductive at any abnormally high applied voltage, said distributed dielectric material comprising a granular, conductive polycrystaline material having thin interstitial, substantially insulating layers disposed between grains of said polycrystaline material.

2. Structure according to claim 1, wherein said polycrystaline material is a non-magnetic solid.

3. Structure according to claim 2, wherein said polycrystaline material is chosen from the group comprising crystaline silicon, zinc oxide, aluminum oxide, magnesium oxide, titanium oxide and bismuth oxide, silicon carbide, titanium carbide and boron carbide, barium titanate and strontium titanate, ferro-electric compounds, polyethylene-mica compounds and zinc sulfide, and substantially conductive powder materials surface treated to produce said substantially insulative layers.

4. Structure according to claim 1, wherein said polycrystaline material comprises grains of a multicrystaline aggregate in a low conductivity matrix with sufficient concentration to procure at least partial contact between said grains.

5. Structure according to claim 1, wherein said dielectric material has a dielectric constant and a dielectric loss angle proportional to the applied voltage, whereby it has a distributed capacitance and features increasing dielectric absorbtion.

6. Structure according to claim 5, wherein any abnormally high applied voltage propagating through the structure is partially eliminated by conduction to ground, partially stored and absorbed by virtue of an increase in the capacitance to ground and an increase in dielectric losses, and partially reflected towards its source as a result of mismatching of the structure due to its increased distributed capacitance.

7. Structure according to claim 1, wherein said dielectric material is a polycrystaline solid comprising agglomerates of relatively conductive magnetic crystals and substantially insulative thin intergranular layers.

8. Structure according to claim 7, wherein said magnetic polycrystaline material is in the form of grains of a multicrystaline aggregate in a low conductivity matrix material with sufficient concentration to procure at least partial contact between said grains.

9. Structure according to claim 7, wherein said dielectric material has a dielectric constant and a dielectric loss angle proportional to the applied voltage, whereby it has a distributed capacitance and increasing dielectric absorbtion, and a magnetic permeability and a magnetic loss angle that are voltage-independent and proportional to the frequency of the applied voltage.

10. Structure according to claim 7, wherein any abnormally high applied voltage propagating through the structure is partially eliminated by conduction to ground, partially stored and absorbed by virtue of an increase in the capacitance to ground and an increase in dielectric losses, partially reflected towards its source as a result of mismatching of the structure due to its increased distributed capacitance, and partially absorbed by virtue of magnetic permeability and magnetic losses.

11. Structure according to claim 7, wherein said intergranular layers comprise a ferrimagnetic ceramic material incorporating specific impurities favoring creation of said intergranular layers, with substantially insulative phases and optional low concentration additives to optimize the non-linearity.

12. Structure according to claim 7, wherein said intergranular layers comprise a substantially conductive ferrimagnetic powder surface treated to produce said substantially insulative layers.

13. Structure according to claim 1, wherein wave propagation is protected by simultaneous elimination of parasitics exceeding a specific amplitude threshold and transients exceeding a specific frequency irrespective of their amplitude.

14. Structure according to claim 1, wherein said dielectric material has a non-linear coefficient of two or more.

15. Structure according to claim 1, wherein said dielectric material is interleaved with at least one insulative layer.

16. Structure according to claim 1, implemented as an electrical cable or line or as a component of an electrical cable or line comprising at least two conductors or at least one conductor and one ground.

17. Structure according to claim 16, implemented as an electrical cable or line or as a component of an electrical cable or line comprising at least two conductors or at least one conductor and one ground and wherein said cable or line or component comprises a conventional inner insulator and said dielectric material on the outside, a specific length of said dielectric material serving as a sleeve for distributing the field gradient at the terminations of the structure.

18. Structure according to claim 1, adapted to propagate a free wave or a guided wave and wherein said non-linearity is selectively implemented.

19. Structure according to claim 1, implemented as an insulated ignition lead for internal combustion engines comprising insulative end caps and wherein at least some of the insulation of said cable and/or said insulative end caps is provided by said dielectric material, whereby dielectric stresses are reduced at any point in contact with or near grounded points and between turns of the cable if coiled.

20. Structure according to claim 1, implemented as a three-pole or four-pole inductive or capacitive protection device, for use in more complex filters.

21. Structure according to claim 1, implemented as a system including at least one inductor and capacitor of which at least one is a three-pole or four-pole device, for use in more complex filters.

22. Structure according to claim 1, wherein expansion of said dielectric material due to the thermal effects of an excessively high applied voltage is controled to procure selectively a temperature coefficent that is positive or null or negative.