Electron beam apparatus

• US 4,855,673 A
• Filed: 02/16/1988
• Issued: 08/08/1989
• Est. Priority Date: 03/20/1987
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Todokoro, Hideo
• Primary Examiner(s): Eisenzopf, Reinhard J.
• Assistant Examiner(s): BURNS, WILLIAM
• Application Number:
  US07/156,458
• Time in Patent Office: 539 Days
• Field of Search: 324/72.5, 324/158 P, 324/158 F, 324/158 D, 324/158 R, 250/310, 250/311, 336/84 R, 336/84 C
• US Class Current: 324/754.22
• CPC Class Codes: G01R 1/06711 Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
• CPC Class Codes: G01R 1/18 Screening arrangements against electric or magnetic fields, e.g. against earth's field
• CPC Class Codes: G01R 31/305 using electron beams investigating or analysing materials by measuring photoelectric effect G01N23/227

Abstract

In an electron beam apparatus in which an electron beam is irradiated on a specimen, secondary electrons are generated from the specimen under the bombardment of the electron beam, and voltage is applied to and a signal voltage is picked up from the specimen through a probe, a metal electrode is disposed on at least part of the outer peripheral surface of the probe through an insulator and the metal electrode is maintained at predetermined electrical potential. The secondary electrons can be shielded from a horizontal electric field generated from the probe and can be detected accurately by means of a detector.

Claims

1. An electron beam apparatus comprising:

means for irradiating an electron beam on a specimen;

detection means for detecting secondary electrons generated from said specimen under the bombardment of the electron beam;

a probe for applying a voltage to said specimen and picking up a signal voltage from said specimen; and

shield means for shielding the secondary electrons from an electric field generated from said probe.

2. An electron beam apparatus according to claim 1 wherein said shield means comprises a metal electrode disposed proximate to and electrically insulated from at least part of the outer peripheral surface of said probe by an insulator, and potential maintaining means for maintaining said metal electrode at a predetermined electrical potential.

3. An electron beam apparatus according to claim 2 wherein said potential maintaining means maintains said metal electrode at predetermined positive potential.

4. An electron beam apparatus according to claim 2 wherein said metal electrode is disposed proximate to said probe at only its surface confronting the electron beam.

5. An electron beam apparatus according to claim 2 wherein said metal electrode is a metal strip which is toroidally wound about said probe.

6. An electron beam apparatus according to claim 2 wherein said insulator is an insulating film formed on the surface of said probe, and said metal electrode is a metal film formed on said insulating film.

7. An electron beam apparatus according to claim 2 wherein said insulator is disposed on at least part of the outer peripheral surface of said probe and said metal electrode is disposed on said insulator.