Electronic shutter for a CCD image sensor

• US 4,875,100 A
• Filed: 10/21/1987
• Issued: 10/17/1989
• Est. Priority Date: 10/23/1986
• Status: Expired due to Term

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Ishikawa, Kikue, Suzuki, Tomoyuki, Yonemoto, Kazuya, Hamasaki, Masaharu, Kagawa, Yoshiaki
• Primary Examiner(s): NOT, DEFINED
• Assistant Examiner(s): NOT, DEFINED
• Application Number:
  US07/110,844
• Time in Patent Office: 727 Days
• Field of Search: 358/213.19, 358/213.31, 358/213.11
• US Class Current: 348/296
• CPC Class Codes: H01L 27/14831 Area CCD imagers
• CPC Class Codes: H01L 27/14887 Blooming suppression
• CPC Class Codes: H04N 25/53 Control of the integration time

Abstract

A solid state imager device having an electronic shutter function suitable for use in a video camera or an electronic still camera to suppress brightness differences on TV screens between open and closed periods of the shutter having a semiconductor substrate of a first conductivity type, a region of second conductivity type formed on the semiconductivity substrate of the first conductivity type and a signal charge accumulating region formed on the surface side of the second conductivity type region wherein, a predetermined voltage is applied to the semiconductor substrate of the first conductivity type and the signal charges accumulated in the signal charge accumulating region are discharged to the semiconductor substrate of the first conductivity type, whereby, the exposure time of the solid state imager device can be controlled so that when this imager device is used, for example, in a video camera, the video camera does not have to be provided with a mechanical shutter.

Claims

1. An electronic shutter for a CCD image sensor, comprising:

a CCD imager device having a semiconductor substrate of a first conductivity type, a region of a second conductivity type formed upon said semiconductor substrate of said first conductivity type, a signal charge accumulating region formed on a surface side of said region of a second conductivity type; and

means for applying a predetermined voltage to said semiconductor substrate of said first conductivity type within a horizontal blanking period to thereby discharge signal charges accumulated in said signal charge accumulating region to said semiconductor substrate of said first conductivity type within the horizontal blanking period.

2. A method for utilizing a CCD image device as an electronic shutter for an electronic camera comprising the step of applying a voltage potential across a semiconductor substrate of a first conductivity type and a region of a second conductivity type formed upon said semiconductor substrate within a horizontal blanking period to thereby discharge signal charges accumulated in a signal charge accumulating region formed on a surface side of said region of a second conductivity type to said semiconductor substrate within said horizontal blanking period.